Quantum dot-containing complex, ink composition including the same, light-emitting device including the same, and electronic apparatus including the same

ABSTRACT

A quantum-dot containing complex includes: a first ligand, which is a hydrocarbon compound including a hydrophilic moiety and a lipophilic moiety and has an aspect ratio of 5 or more; and a second ligand, which is a hydrocarbon compound including a hydrophilic moiety and a lipophilic moiety and has an aspect ratio of 4 or less, wherein the hydrophile-lipophile balances (HLBs) of the first ligand and the second ligand are each independently 7 or more.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2021-0181030, filed on Dec. 16, 2021, in the KoreanIntellectual Property Office, the disclosure of which is incorporated byreference herein in its entirety.

BACKGROUND 1. Field

One or more embodiments relate to a quantum dot-containing complex, anink composition including the same, a light-emitting device includingthe same, and an electronic apparatus including the same.

2. Description of the Related Art

Quantum dots are nanocrystals of semiconductor materials and exhibit aquantum confinement effect. When quantum dots receive light from anexcitation source and reach an energy excited state, they emit energycorresponding to their own energy band gap. In this regard, even insubstantially the same material, the wavelength varies according to theparticle size, and accordingly, by adjusting the size of quantum dots,light of a desirable or suitable wavelength range may be obtained, andexcellent or suitable color purity and high luminescence efficiency maybe obtained. Thus, quantum dots may be applied to one or more suitabledevices.

By adjusting the particle size of quantum dots, the quantum dots mayrealize (e.g., emit) one or more suitable colors and have excellent orsuitable luminescence characteristics due to the quantum confinementeffect.

In addition, a quantum dot can be utilized as a material that performsone or more suitable optical functions (for example, a photo-conversionfunction) in optical members. Quantum dots, as nano-sized semiconductornanocrystals, may have different energy band gaps by adjusting the sizeand/or composition of the nanocrystals, and thus may emit light of oneor more suitable emission wavelengths.

Optical members including such quantum dots may have the form of athin-film, for example, a thin film patterned according to subpixels.Such optical members may be utilized as a color conversion member of adevice including one or more suitable light sources.

Quantum dot ink as a photoluminescent material may be prepared by, forexample, directly dispersing quantum dots, which are light-convertingmaterials, in a monomer, and in this case, dispersibility may become aproblem.

SUMMARY

Aspects according to one or more embodiments are directed toward aquantum dot-containing complex with an improved absorption rate andimproved light conversion efficiency, an ink composition including thesame, a light-emitting device including the same, and an electronicapparatus including the same.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments of the disclosure.

According to one or more embodiments,

a quantum dot-containing complex includes a quantum dot, and

a first ligand and a second ligand, each coordinate (e.g., bound to) asurface of the quantum dot,

wherein the first ligand is a hydrocarbon compound including ahydrophilic moiety and a lipophilic moiety and has an aspect ratio of 5or greater,

the second ligand is a hydrocarbon compound including a hydrophilicmoiety and a lipophilic moiety and has an aspect ratio of 4 or less, and

a hydrophile-lipophile balance (HLB) of the first ligand and an HLB ofthe second ligand may each independently be 7 or greater.

Aspect ratio=ligand length/ligand width Davies' Equation

${HLB} = {7 + {\sum\limits_{i = 1}^{m}H_{i}} - {n \times 0.475}}$

In the Davies' Equation above,

m=number of hydrophilic moieties in a ligand molecule,

H_(i)=coefficient of i^(th) hydrophilic moiety, and

n=number of lipophilic moieties in the ligand molecule.

According to one or more embodiments, an ink composition includes thequantum dot-containing complex, a monomer, a scatterer, and aninitiator.

According to one or more embodiments,

a light-emitting device includes a first electrode,

a second electrode facing the first electrode, and

an interlayer between the first electrode and the second electrode andincluding an emission layer,

the emission layer includes the quantum dot-containing complex.

According to one or more embodiments,

an electronic apparatus includes the quantum dot-containing complex.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and enhancements of certainembodiments of the disclosure will be more apparent from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a schematic cross-sectional view of a structure of alight-emitting device according to an embodiment;

FIG. 2 is a cross-sectional view of a light-emitting apparatus accordingto an embodiment of the disclosure; and

FIG. 3 is a cross-sectional view of a light-emitting apparatus accordingto another embodiment of the disclosure.

DETAILED DESCRIPTION

Reference will now be made in more detail to embodiments, examples ofwhich are illustrated in the accompanying drawings, wherein likereference numerals refer to like elements throughout the specification,and duplicative descriptions thereof may not be provided. In thisregard, the present embodiments may have different forms and should notbe construed as being limited to the descriptions set forth herein.Accordingly, the embodiments are merely described below, by referring tothe drawings, to explain aspects of the present description. As usedherein, the term “and/or” includes any and all combinations of one ormore of the associated listed items. Throughout the disclosure, theexpression “at least one of a, b or c” indicates only a, only b, only c,both (e.g., simultaneously) a and b, both (e.g., simultaneously) a andc, both (e.g., simultaneously) b and c, all of a, b, and c, orvariation(s) thereof.

Quantum Dot-Containing Complex

A quantum dot-containing complex according to one or more embodimentsincludes:

a quantum dot; and

a first ligand and a second ligand, each coordinate (e.g., bound to) asurface of the quantum dot,

wherein the first ligand, as a hydrocarbon compound including ahydrophilic moiety and a lipophilic moiety, may have an aspect ratio(defined below) of 5 or greater,

the second ligand, as a hydrocarbon compound including a hydrophilicmoiety and a lipophilic moiety, may have an aspect ratio of 4 or less,and

hydrophile-lipophile balances (HLBs) (defined below by Davies' Equation)of the first ligand and the second ligand may each independently be 7 orgreater.

Aspect ratio=ligand length/ligand width Davies' Equation

${HLB} = {7 + {\sum\limits_{i = 1}^{m}H_{i}} - {n \times 0.475}}$

wherein in Davies' Equation above,

m=number of hydrophilic moieties in a ligand molecule

H_(i)=coefficient of i^(th) hydrophilic moiety

n=number of lipophilic moieties in the ligand molecule.

The first ligand has a more rod-like shape than the second ligand, andwhen expressed numerically, may have an aspect ratio of 5 or greater. Inan embodiment, the aspect ratio of the first ligand may be in a range of5 to 20.

The second ligand has a more sphere-like shape than the first ligand,and when expressed numerically, may have an aspect ratio of 4 or less.In an embodiment, the aspect ratio of the second ligand may be in arange of 1 to 4.

The first ligand and the second ligand, as hydrocarbon compounds, eachinclude carbon and hydrogen, but may further include a hydrophilicmoiety and a lipophilic moiety that include elements other than carbonand hydrogen. Therefore, the first ligand and the second ligand arehydrocarbon compounds, and may each further include, for example,oxygen, nitrogen, sulfur, etc. in addition to carbon and hydrogen.

The first ligand and the second ligand coordinate (e.g., bound to) asurface of the quantum dot, and the quantum dot-containing complexaccording to an embodiment of the disclosure, which is coordinated withthe first and second ligands having the respective aspect ratios, hasimproved dispersibility.

Davies (in Davies' Equation) has defined an HLB value as 7 plus totalsum of coefficients of all hydrophilic moiety (H coefficients) minustotal sum of coefficients of all lipophilic moiety (H coefficients).

In an embodiment, the hydrophilic moiety may include —SO₄ ⁻Na⁺, —COO⁻K⁺,—COO⁻Na⁺, tertiary amine, —COOH, —OH, —O—, ═O, or any combinationthereof.

A coefficient of the hydrophilic moiety, —SO₄ ⁻Na⁺, is 38.7, acoefficient of the hydrophilic moiety, —COO⁻K⁺, is 21.1, a coefficientof the hydrophilic moiety, —COO⁻Na⁺, is 19.1, a coefficient of thehydrophilic moiety, tertiary amine, is 9.4, a coefficient of thehydrophilic moiety, —COOH, is 2.1, a coefficient of the hydrophilicmoiety, —OH, is 1.9, and a coefficient of each of the hydrophilicmoieties, —O— and ═O, is 1.3.

In an embodiment, the lipophilic moiety may include —CH—, —CH₂—, CH₃—,═CH—, ═CH₂, or any combination thereof.

A coefficient of each of the lipophilic moieties, —CH—, —CH₂—, CH₃—,═CH—, and ═CH₂, is 0.475.

In a case where HLB values of the first ligand and the second ligand areeach independently 7 or greater, for example, when the quantumdot-containing complex is dispersed in a hydrophilic monomer,dispersibility is good or suitable. In an embodiment, HLB values of thefirst ligand and the second ligand may each independently be in a rangeof 7 to 18.

In an embodiment, a COOH moiety may be included in the first ligand at aterminus (e.g., terminal end) of the first ligand, and a COOH moiety maybe included in the second ligand at a terminus (e.g., terminal end) ofthe second ligand. In an embodiment, the first ligand and the secondligand may be coordinated to the quantum dot via the COOH group at eachof the termini (e.g., terminal end) thereof.

In an embodiment, the first ligand may include two or more ethyleneglycol moieties (OCH₂CH₂O). When the first ligand includes, for example,two or more ethylene glycol moieties (OCH₂CH₂O), the first ligand mayhave an aspect ratio of 5 or greater and an HLB of 7 or greater.

In an embodiment, the first ligand may be2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

In an embodiment, the second ligand may be mono-2-(acryloyloxy)ethylsuccinate.

In an embodiment, a ratio of a weight of the first ligand to a weight ofthe second ligand (e.g., a weight ratio between the first ligand and thesecond ligand) may be in a range of 5:4 to 1:8. When the first ligandincreases in weight (e.g., when an amount of the first ligand in weightis increased), resulting in the ratio of the first ligand to the secondligand to be greater than the ratio of 5:4 (for example, a weight ratioof the first ligand to the second ligand is 6:4), light conversionefficiency of the quantum dot-containing complex may be greatly reduced.When the second ligand increases in weight (e.g., when an amount of thesecond ligand in weight is increased), resulting in the ratio of thefirst ligand to the second ligand to be lower than the ratio of 1:8 (forexample, a ratio of the first ligand to the second ligand is 1:8.5), anabsorption rate and light conversion efficiency of the quantum-dotcontaining complex is reduced.

In an embodiment, a ratio of a weight of the quantum dot to a totalweight of the first ligand and the second ligand may be in a range of10:1 to 10:4. When the total weight of the first ligand and the secondligand decreases, resulting in the ratio of the weight of the quantumdot to the total weight of the first ligand and the second ligand to begreater than the ratio of 10:1 (for example, a ratio of the weight ofthe quantum dot to the total weight of the first ligand and the secondligand is 10:0.5), the quantum dot may not be sufficiently coordinatedby the ligands, resulting in a decrease in an absorption rate and lightconversion efficiency of the quantum dot-containing complex.

When the total weight of the first ligand and the second ligandincreases, resulting in the ratio of the weight of the quantum dot tothe total weight of the first ligand and the second ligand to be lowerthan the ratio of 10:4 (for example, a ratio of the weight of thequantum dot to the total weight of the first ligand and the secondligand is 10:5), a ligand (e.g., an excess ligand) that has notcoordinated (e.g., bound to) the quantum dot may bring undesirable orbad effects, and as a result, an absorption rate and light conversionefficiency of the quantum dot-containing complex may be reduced.

A quantum dot is a spherical or substantially spherical semiconductornanomaterial having a size of several to several hundreds of nm, and mayinclude a core including a material having a small band gap and a shellaround (e.g., surrounding) the core.

In an embodiment, the quantum dot may have a core-shell structure or maybe a perovskite compound. The core-shell structure may include: a coreincluding a crystal of a first semiconductor; and a shell including acrystal of a second semiconductor.

In an embodiment, the first semiconductor and the second semiconductormay each independently include a Group 12-Group 16-based compound, aGroup 13-Group 15-based compound, a Group 14-Group 16-based compound, aGroup 14-based compound, a Group 11-Group 13-Group 16-based compound, aGroup 11-Group 12-Group 13-Group 16-based compound, or any combinationthereof. As used herein, the term “Group” followed by a number such asin “Group 12” refers to the Group with that number in the periodic tableof elements (e.g., Group 12 in the periodic table of elements).

In an embodiment, the first semiconductor and the second semiconductormay each independently include:

CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgS, MgSe,CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS,CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe MgZnS,MgZnSe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS,HgZnSeTe, or HgZnSTe;

GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP,GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP,InAlP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb,GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP,InAlNAs, InAlNSb, InAlPAs, InAlPSb, or InZnP;

SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe,PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, or SnPbSTe;

Si, Ge, SiC, or SiGe;

AgInS, AgInS₂, CuInS, CuInS₂, CuGaO₂, AgGaO₂, or AgAlO₂;

or any combination thereof.

In an embodiment, the first semiconductor may include GaN, GaP, GaAs,GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb,GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP,InNAs, InNSb, InPAs, InPSb, GaAlNP GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb,GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb,InAlPAs, InAlPSb, or any combination thereof, and the secondsemiconductor may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS,HgSe, HgTe, MgS, MgSe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe,HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe,HgZnS, HgZnSe, HgZnTe MgZnS, MgZnSe, CdZnSeS, CdZnSeTe, CdZnSTe,CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or anycombination thereof.

The perovskite compound is a material having a three-dimensional crystalstructure associated with the crystal structure of CaTiO₃.

In an embodiment, the perovskite compound may be represented by Formula4:

[A][B_(m)][X]₃  Formula 4

wherein, in Formula 4,

A is a monovalent organic-cation, a monovalent inorganic-cation, or anycombination thereof,

B is at least one divalent inorganic-cation,

m is a real number satisfying 0<m≤1, and

X is at least one monovalent anion.

An average particle diameter (D50) of the quantum dot may be in a rangeof about 2 nm to about 10 nm.

An average particle diameter (D50) of the quantum dot-containing complexmay be in a range of about 40 nm to about 1,000 nm, for example, about50 nm to about 1,000 nm, about 100 nm to about 500 nm, or about 100 nmto about 200 nm.

When the average particle diameter of the quantum dot-containing complexsatisfies the range described above, the quantum dot-containing complexmay have an excellent or suitable dispersion degree while including arelatively large amount of quantum dots. That is, when the averageparticle diameter of the quantum dot-containing complex satisfies therange described above, a large quantity of quantum dots may be dispersedas the quantum dot-containing complex. The average particle diameter maybe measured by, for example, a laser diffraction method. Because thelaser diffraction method is well known, a description thereof will notbe provided.

Description of FIG. 1

FIG. 1 is a schematic cross-sectional view of a light-emitting device 10according to an embodiment of the disclosure. The light-emitting device10 includes a first electrode 110, an interlayer 130, and a secondelectrode 150.

Hereinafter, the structure of the light-emitting device 10 according toan embodiment and a method of manufacturing the light-emitting device 10will be described in connection with FIG. 1 .

First Electrode 110

In FIG. 1 , a substrate may be additionally located under the firstelectrode 110 and/or above the second electrode 150. As the substrate, aglass substrate or a plastic substrate may be utilized. In anembodiment, the substrate may be a flexible substrate, and may includeplastics with excellent or suitable heat resistance and durability, suchas polyimide, polyethylene terephthalate (PET), polycarbonate,polyethylene naphthalate, polyarylate (PAR), polyetherimide, or anycombination thereof.

The first electrode 110 may be formed by, for example, depositing orsputtering a material for forming the first electrode 110 on thesubstrate. When the first electrode 110 is an anode, a material forforming the first electrode 110 may be a high work function materialthat facilitates injection of holes.

The first electrode 110 may be a reflective electrode, asemi-transmissive electrode, or a transmissive electrode. When the firstelectrode 110 is a transmissive electrode, a material for forming thefirst electrode 110 may include indium tin oxide (ITO), indium zincoxide (IZO), tin oxide (SnO₂), zinc oxide (ZnO), or one or morecombinations thereof. In an embodiment, when the first electrode 110 isa semi-transmissive electrode or a reflective electrode, magnesium (Mg),silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca),magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), or one or morecombinations thereof may be utilized as a material for forming the firstelectrode 110.

The first electrode 110 may have a single-layered structure consistingof a single layer or a multilayer structure including a plurality oflayers. In an embodiment, the first electrode 110 may have athree-layered structure of ITO/Ag/ITO.

Interlayer 130

The interlayer 130 may be located on the first electrode 110. Theinterlayer 130 may include an emission layer.

The interlayer 130 may further include a hole transport region betweenthe first electrode 110 and the emission layer and an electron transportregion between the emission layer and the second electrode 150.

The interlayer 130 may further include metal-containing compounds suchas organometallic compounds, inorganic materials such as quantum dots,and/or the like, in addition to one or more suitable organic materials.

In one or more embodiments, the interlayer 130 may include, i) two ormore emitting units sequentially stacked between the first electrode 110and the second electrode 150, and ii) a charge generation layer locatedbetween two emitting units. When the interlayer 130 includes two or moreemitting units and the charge generation layer as described above, thelight-emitting device 10 may be a tandem light-emitting device.

Hole Transport Region in Interlayer 130

The hole transport region may have: i) a single-layered structureconsisting of a single layer consisting of a single material, ii) asingle-layered structure consisting of a single layer including (e.g.,consisting of) a plurality of different materials, or iii) amulti-layered structure including a plurality of layers includingdifferent materials.

The hole transport region may include a hole injection layer, a holetransport layer, an emission auxiliary layer, an electron blockinglayer, or any combination thereof.

For example, the hole transport region may have a multi-layeredstructure including a hole injection layer/hole transport layerstructure, a hole injection layer/hole transport layer/emissionauxiliary layer structure, a hole injection layer/emission auxiliarylayer structure, a hole transport layer/emission auxiliary layerstructure, or a hole injection layer/hole transport layer/electronblocking layer structure, the constituting layers of each structurebeing stacked sequentially from the first electrode 110 in therespective stated order.

The hole transport region may include a compound represented by Formula201, a compound represented by Formula 202, or any combination thereof:

wherein, in Formulae 201 and 202,

L₂₀₁ to L₂₀₄ may each independently be a C₃-C₆₀ carbocyclic groupunsubstituted or substituted with at least one R_(10a) or a C₁-C₆₀heterocyclic group unsubstituted or substituted with at least oneR_(10a),

L₂₀₅ may be *—O—*′, *—S—*′, *—N(Q₂₀₁)-*′, a C₁-C₂₀ alkylene groupunsubstituted or substituted with at least one R_(10a), a C₂-C₂₀alkenylene group unsubstituted or substituted with at least one R_(10a),a C₃-C₆₀ carbocyclic group unsubstituted or substituted with at leastone R_(10a), or a C₁-C₆₀ heterocyclic group unsubstituted or substitutedwith at least one R_(10a),

xa1 to xa4 may each independently be an integer from 0 to 5,

xa5 may be an integer from 1 to 10,

R₂₀₁ to R₂₀₄ and Q₂₀₁ may each independently be a C₃-C₆₀ carbocyclicgroup unsubstituted or substituted with at least one R_(10a) or a C₁-C₆₀heterocyclic group unsubstituted or substituted with at least oneR_(10a),

R₂₀₁ and R₂₀₂ may optionally be linked to each other, via a single bond,a C₁-C₅ alkylene group unsubstituted or substituted with at least oneR_(10a), or a C₂-C₅ alkenylene group unsubstituted or substituted withat least one R_(10a), to form a C₈-C₆₀ polycyclic group (for example, acarbazole group and/or the like) unsubstituted or substituted with atleast one R_(10a) (for example, Compound HT16),

R₂₀₃ and R₂₀₄ may optionally be linked to each other, via a single bond,a C₁-C₅ alkylene group unsubstituted or substituted with at least oneR_(10a), or a C₂-C₅ alkenylene group unsubstituted or substituted withat least one R_(10a), to form a C₈-C₆₀ polycyclic group unsubstituted orsubstituted with at least one R_(10a), and

na1 may be an integer from 1 to 4.

In an embodiment, each of Formulae 201 and 202 may include at least oneof the groups represented by Formulae CY201 to CY217.

R_(10b) and R_(10c) in Formulae CY201 to CY217 may each independently bethe same as described in connection with R_(10a), ring CY201 to ringCY204 may each independently be a C₃-C₂₀ carbocyclic group or a C₁-C₂₀heterocyclic group, and at least one hydrogen in Formulae CY201 to CY217may be unsubstituted or substituted with R_(10a) as described above.

In an embodiment, ring CY201 to ring CY204 in Formulae CY201 to CY217may each independently be a benzene group, a naphthalene group, aphenanthrene group, or an anthracene group.

In an embodiment, each of Formulae 201 and 202 may include at least oneof the groups represented by Formulae CY201 to CY203.

In an embodiment, Formula 201 may include at least one of the groupsrepresented by Formulae CY201 to CY203 and at least one of the groupsrepresented by Formulae CY204 to CY217.

In an embodiment, xa1 in Formula 201 may be 1, R₂₀₁ may be a grouprepresented by one of Formulae CY201 to CY203, xa2 may be 0, and R₂₀₂may be a group represented by one of Formulae CY204 to CY207.

In an embodiment, each of Formulae 201 and 202 may not include (e.g.,may exclude) any of the groups represented by Formulae CY201 to CY203.

In an embodiment, each of Formulae 201 and 202 may not include (e.g.,may exclude) any of the groups represented by Formulae CY201 to CY203,and may include at least one of the groups represented by Formulae CY204to CY217.

In an embodiment, each of Formulae 201 and 202 may not include (e.g.,may exclude) any of the groups represented by Formulae CY201 to CY217.

In an embodiment, the hole transport region may include at least one ofcompounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB(NPD), p-NPB, TPD,Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD,4,4′,4″-tris(N-carbazolyl)triphenylamine (TCTA),polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA),poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS),polyaniline/camphor sulfonic acid (PANI/CSA),polyaniline/poly(4-styrenesulfonate) (PANI/PSS), or any combinationthereof:

A thickness of the hole transport region may be in a range of about 50 Åto about 10,000 Å, for example, about 100 Å to about 4,000 Å. When thehole transport region includes a hole injection layer, a hole transportlayer, or any combination thereof, a thickness of the hole injectionlayer may be in a range of about 100 Å to about 9,000 Å, for example,about 100 Å to about 1,000 Å, and a thickness of the hole transportlayer may be in a range of about 50 Å to about 2,000 Å, for example,about 100 Å to about 1,500 Å. When the thicknesses of the hole transportregion, the hole injection layer and the hole transport layer are withintheir respective ranges, satisfactory hole-transporting characteristicsmay be obtained without a substantial increase in driving voltage.

The emission auxiliary layer may increase light-emission efficiency bycompensating for an optical resonance distance according to thewavelength of light emitted from the emission layer, and the electronblocking layer may block or reduce the leakage of electrons from theemission layer to the hole transport region. Materials that may beincluded in the hole transport region may be included in the emissionauxiliary layer and the electron blocking layer.

p-Dopant

The hole transport region may further include, in addition to thematerials described above, a charge-generation material for theimprovement of conductive properties. The charge-generation material maybe uniformly or non-uniformly dispersed in the hole transport region(for example, in the form of a single layer consisting of acharge-generation material).

The charge-generation material may be, for example, a p-dopant.

In an embodiment, a lowest unoccupied molecular orbital (LUMO) energylevel of the p-dopant may be about −3.5 eV or less.

In an embodiment, the p-dopant may include a quinone derivative, a cyanogroup-containing compound, a compound containing element EL1 and elementEL2, or any combination thereof.

Examples of the quinone derivative may include TCNQ, F4-TCNQ, and/or thelike.

Examples of the cyano group-containing compound may include HAT-CN, acompound represented by Formula 221 below, and/or the like.

In Formula 221,

R₂₂₁ to R₂₂₃ may each independently be a C₃-C₆₀ carbocyclic groupunsubstituted or substituted with at least one R_(10a) or a C₁-C₆₀heterocyclic group unsubstituted or substituted with at least oneR_(10a), and

at least one of R₂₂₁ to R₂₂₃ may each independently be a C₃-C₆₀carbocyclic group or a C₁-C₆₀ heterocyclic group, each substituted with:a cyano group; —F; —CI; —Br; —I; a C₁-C₂₀ alkyl group substituted with acyano group, —F, —Cl, —Br, —I, or any combination thereof; or anycombination thereof.

In the compound containing element EL1 and element EL2, element EL1 maybe a metal, a metalloid, or a combination thereof, and element EL2 maybe a non-metal, a metalloid, or a combination thereof.

Examples of the metal may include: an alkali metal (for example, lithium(Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); analkaline earth metal (for example, beryllium (Be), magnesium (Mg),calcium (Ca), strontium (Sr), barium (Ba), etc.); a transition metal(for example, titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V),niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten(W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium(Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni),palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au),etc.); a post-transition metal (for example, zinc (Zn), indium (In), tin(Sn), etc.); and a lanthanide metal (for example, lanthanum (La), cerium(Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm),europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium(Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.).

Examples of the metalloid may include silicon (Si), antimony (Sb), andtellurium (Te).

Examples of the non-metal may include oxygen (O) and halogen (forexample, F, Cl, Br, I, etc.).

In an embodiment, examples of the compound containing element EL1 andelement EL2 may include a metal oxide, a metal halide (for example, ametal fluoride, a metal chloride, a metal bromide, and/or a metaliodide), a metalloid halide (for example, a metalloid fluoride, ametalloid chloride, a metalloid bromide, and/or a metalloid iodide), ametal telluride, or any combination thereof.

Examples of the metal oxide may include tungsten oxide (for example, WO,W₂O₃, WO₂, WO₃, W₂O₅, etc.), vanadium oxide (for example, VO, V₂O₃, VO₂,V₂O₅, etc.), molybdenum oxide (MoO, Mo₂O₃, MoO₂, MoO₃, Mo₂O₅, etc.), andrhenium oxide (for example, ReO₃, etc.).

Examples of the metal halide may include an alkali metal halide, analkaline earth metal halide, a transition metal halide, apost-transition metal halide, and a lanthanide metal halide.

Examples of the alkali metal halide may include LiF, NaF, KF, RbF, CsF,LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI,RbI, and CsI.

Examples of the alkaline earth metal halide may include BeF₂, MgF₂,CaF₂, SrF₂, BaF₂, BeCl₂, MgCl₂, CaCl₂), SrCl₂, BaCl₂, BeBr₂, MgBr₂,CaBr₂, SrBr₂, BaBr₂, BeI₂, MgI₂, CaI₂, SrI₂, and BaI₂.

Examples of the transition metal halide may include titanium halide (forexample, TiF₄, TiCl₄, TiBr₄, TiI₄, etc.), zirconium halide (for example,ZrF₄, ZrCl₄, ZrBr₄, ZrI₄, etc.), hafnium halide (for example, HfF₄,HfCl₄, HfBr₄, HfI₄, etc.), vanadium halide (for example, VF₃, VCl₃,VBr₃, VI₃, etc.), niobium halide (for example, NbF₃, NbCl₃, NbBr₃, NbI₃,etc.), tantalum halide (for example, TaF₃, TaCl₃, TaBr₃, TaI₃, etc.),chromium halide (for example, CrF₃, CrCl₃, CrBr₃, CrI₃, etc.),molybdenum halide (for example, MoF₃, MoCl₃, MoBr₃, MoI₃, etc.),tungsten halide (for example, WF₃, WCl₃, WBr₃, WI₃, etc.), manganesehalide (for example, MnF₂, MnCl₂, MnBr₂, MnI₂, etc.), technetium halide(for example, TcF₂, TcCl₂, TcBr₂, TcI₂, etc.), rhenium halide (forexample, ReF₂, ReCl₂, ReBr₂, ReI₂, etc.), iron halide (for example,FeF₂, FeCl₂, FeBr₂, FeI₂, etc.), ruthenium halide (for example, RuF₂,RuCl₂, RuBr₂, RuI₂, etc.), osmium halide (for example, OsF₂, OsCl₂,OsBr₂, OsI₂, etc.), cobalt halide (for example, CoF₂, CoCl₂, CoBr₂,CoI₂, etc.), rhodium halide (for example, RhF₂, RhCl₂, RhBr₂, RhI₂,etc.), iridium halide (for example, IrF₂, IrCl₂, IrBr₂, IrI₂, etc.),nickel halide (for example, NiF₂, NiCl₂, NiBr₂, NiI₂, etc.), palladiumhalide (for example, PdF₂, PdCl₂, PdBr₂, PdI₂, etc.), platinum halide(for example, PtF₂, PtCl₂, PtBr₂, PtI₂, etc.), copper halide (forexample, CuF, CuCl, CuBr, CuI, etc.), silver halide (for example, AgF,AgCl, AgBr, AgI, etc.), and gold halide (for example, AuF, AuCl, AuBr,AuI, etc.).

Examples of the post-transition metal halide may include zinc halide(for example, ZnF₂, ZnCl₂, ZnBr₂, ZnI₂, etc.), indium halide (forexample, InI₃, etc.), and tin halide (for example, SnI₂, etc.).

Examples of the lanthanide metal halide may include YbF, YbF₂, YbF₃,SmF₃, YbCl, YbCl₂, YbCl₃ SmCl₃, YbBr, YbBr₂, YbBr₃, SmBr₃, YbI, YbI₂,YbI₃, and SmI₃.

Examples of the metalloid halide may include antimony halide (forexample, SbCl₅, etc.).

Examples of the metal telluride may include an alkali metal telluride(for example, Li₂Te, Na₂Te, K₂Te, Rb₂Te, Cs₂Te, etc.), an alkaline earthmetal telluride (for example, BeTe, MgTe, CaTe, SrTe, BaTe, etc.), atransition metal telluride (for example, TiTe₂, ZrTe₂, HfTe₂, V₂Te₃,Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, FeTe, RuTe,OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu₂Te, CuTe, Ag₂Te, AgTe,Au₂Te, etc.), a post-transition metal telluride (for example, ZnTe,etc.), and a lanthanide metal telluride (for example, LaTe, CeTe, PrTe,NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

Emission Layer in Interlayer 130

When the light-emitting device 10 is a full-color light-emitting device,the emission layer may be patterned into a red emission layer, a greenemission layer, and/or a blue emission layer, according to a sub-pixel.In an embodiment, the emission layer may have a stacked structure of twoor more layers selected from a red emission layer, a green emissionlayer, and a blue emission layer, in which the two or more layerscontact each other or are separated from each other. In one or moreembodiments, the emission layer may include two or more materialsselected from a red light-emitting material, a green light-emittingmaterial, and a blue light-emitting material, in which the two or morematerials are mixed with each other in a single layer to emit whitelight.

The emission layer may include a host and a dopant. The dopant mayinclude a phosphorescent dopant, a fluorescent dopant, or anycombination thereof.

An amount of the dopant in the emission layer may be from about 0.01parts by weight to about 15 parts by weight based on 100 parts by weightof the host.

In an embodiment, the emission layer may include a delayed fluorescencematerial. The delayed fluorescence material may act (e.g., serve) as ahost or a dopant in the emission layer.

In some embodiments, the emission layer may include the quantumdot-containing complex (hereinafter, also referred to as a “quantumdot”).

Quantum dots are dispersed in a naturally coordinated form in adispersion medium such as an organic solvent and/or polymer resin, andthe dispersion medium may be any suitable transparent medium that doesnot affect the wavelength conversion performance of the quantum dots,does not change by light or reflect light, and does not cause absorptionof light. In an embodiment, the organic solvent may include at least oneselected from toluene, chloroform, and ethanol, and the polymer resinmay include at least one selected from epoxy, silicone, polystyrene, andacrylate.

Unlike a larger (e.g., bulky) material, quantum dots have adiscontinuous band gap energy due to the quantum confinement effect. Inaddition, in a quantum dot, a gap between energy bands varies accordingto the size of the quantum dot, and even when the same quantum dot(e.g., quantum dot with the same material composition) is utilized,light with different wavelengths may be emitted when the size thereof isdifferent. The smaller the size of the quantum dot, the greater the bandgap energy, accordingly, the shorter the wavelength of light that isemitted by the quantum dot. Utilizing these characteristics, the size ofthe quantum dot may be adjusted by appropriately changing the growthcondition of the nanocrystal to obtain light of the desired or suitablewavelength range. Therefore, by introducing such a quantum dot into alight-emitting device, a light-emitting device having high lightefficiency and color purity may be implemented (obtained).

When the emission layer includes a host and a dopant and does notinclude a quantum dot, a color conversion layer may include a quantumdot-containing complex.

A thickness of the emission layer may be in a range of about 100 Å toabout 1,000 Å, for example, about 200 Å to about 600 Å. When thethickness of the emission layer is within these ranges, excellent orsuitable light-emission characteristics may be obtained without asubstantial increase in driving voltage.

Host

The host may include a compound represented by Formula 301 below:

[Ar₃₀₁]_(xb11)-[(L₃₀₁)_(xb1)-R₃₀₁]_(xb21)  Formula 301

wherein, in Formula 301,

Ar₃₀₁ and L₃₀₁ may each independently be a C₃-C₆₀ carbocyclic group thatis unsubstituted or substituted with at least one R_(10a) or a C₁-C₆heterocyclic group that is unsubstituted or substituted with at leastone R_(10a),

xb11 may be 1, 2, or 3,

xb1 may be an integer from 0 to 5,

R₃₀₁ may be hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, acyano group, a nitro group, a C₁-C₆₀ alkyl group unsubstituted orsubstituted with at least one R_(10a), a C₂-C₆₀ alkenyl groupunsubstituted or substituted with at least one R_(10a), a C₂-C₆₀ alkynylgroup unsubstituted or substituted with at least one R_(10a), a C₁-C₆₀alkoxy group unsubstituted or substituted with at least one R_(10a), aC₃-C₆₀ carbocyclic group unsubstituted or substituted with at least oneR_(10a), a C₁-C₆₀ heterocyclic group unsubstituted or substituted withat least one R_(10a), —Si(Q₃₀₁)(Q₃₀₂)(Q₃₀₃), —N(Q₃₀₁)(Q₃₀₂),—B(Q₃₀₁)(Q₃₀₂), —C(═O)(Q₃₀₁), —S(═O)₂(Q₃₀₁), or —P(═O)(Q₃₀₁)(Q₃₀₂),

xb21 may be an integer from 1 to 5, and

Q₃₀₁ to Q₃₀₃ may each independently be the same as described inconnection with Q₁.

In an embodiment, when xb11 in Formula 301 is 2 or more, two or more ofAr₃₀₁(s) may be linked to each other via a single bond.

In an embodiment, the host may include a compound represented by Formula301-1, a compound represented by Formula 301-2, or any combinationthereof:

wherein, in Formulae 301-1 and 301-2,

ring A₃₀₁ to ring A₃₀₄ may each independently be a C₃-C₆₀ carbocyclicgroup that is unsubstituted or substituted with at least one R_(10a) ora C₁-C₆₀ heterocyclic group that is unsubstituted or substituted with atleast one R_(10a),

X₃₀₁ may be O, S, N-[(L₃₀₄)_(xb4)-R₃₀₄], C(R₃₀₄)(R₃₀₅), orSi(R₃₀₄)(R₃₀₅),

xb22 and xb23 may each independently be 0, 1, or 2,

L₃₀₁, xb1, and R₃₀₁ may respectively be the same as described in thepresent specification,

L₃₀₂ to L₃₀₄ may each independently be the same as described inconnection with L₃₀₁,

xb2 to xb4 may each independently be the same as described in connectionwith xb1, and

R₃₀₂ to R₃₀₅ and R₃₁₁ to R₃₁₄ may each independently be the same asdescribed in connection with R₃₀₁.

In an embodiment, the host may include an alkali earth metal complex, apost-transition metal complex, or a combination thereof. In anembodiment, the host may include a Be complex (for example, CompoundH55), an Mg complex, a Zn complex, or a combination thereof.

In an embodiment, the host may include at least one of Compounds H1 toH124, 9,10-di(2-naphthyl)anthracene (ADN),2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN),9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN),4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di-9-carbazolylbenzene(mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), or any combinationthereof:

Phosphorescent Dopant

In one or more embodiments, the phosphorescent dopant may include atleast one transition metal as a central metal.

The phosphorescent dopant may include a monodentate ligand, a bidentateligand, a tridentate ligand, a tetradentate ligand, a pentadentateligand, a hexadentate ligand, or any combination thereof.

The phosphorescent dopant may be electrically neutral.

In an embodiment, the phosphorescent dopant may include anorganometallic compound represented by Formula 401:

wherein, in Formulae 401 and 402,

M may be a transition metal (for example, iridium (Ir), platinum (Pt),palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf),europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium(Tm)),

L₄₀₁ may be a ligand represented by Formula 402, and xc1 may be 1, 2, or3, wherein, when xc1 is two or more, two or more of L₄₀₁(s) may beidentical to or different from each other,

L₄₀₂ may be an organic ligand, and xc2 may be 0, 1, 2, 3, or 4, wherein,when xc2 is 2 or more, two or more of L₄₀₂(s) may be identical to ordifferent from each other,

X₄₀₁ and X₄₀₂ may each independently be nitrogen or carbon,

ring A₄₀₁ and ring A₄₀₂ may each independently be a C₃-C₆₀ carbocyclicgroup or a C₁-C₆₀ heterocyclic group,

T₄₀₁ may be a single bond, —O—, —S—, —C(═O)—, —N(Q₄₁₁)-,—C(Q₄₁₁)(Q₄₁₂)-, —C(Q₄₁₁)=C(Q₄₁₂)-, —C(Q₄₁₁)=, or ═C═,

X₄₀₃ and X₄₀₄ may each independently be a chemical bond (for example, acovalent bond or a coordinate bond), O, S, N(Q₄₁₃), B(Q₄₁₃), P(Q₄₁₃),C(Q₄₁₃)(Q₄₁₄), or Si(Q₄₁₃)(Q₄₁₄),

Q₄₁₁ to Q₄₁₄ may each independently be the same as described inconnection with Q₁,

R₄₀₁ and R₄₀₂ may each independently be hydrogen, deuterium, —F, —Cl,—Br, —I, a hydroxyl group, a cyano group, a nitro group, a C₁-C₂₀ alkylgroup that is unsubstituted or substituted with at least one R_(10a), aC₁-C₂₀ alkoxy group that is unsubstituted or substituted with at leastone R_(10a), a C₃-C₆₀ carbocyclic group that is unsubstituted orsubstituted with at least one R_(10a), a C₁-C₆₀ heterocyclic group thatis unsubstituted or substituted with at least one R_(10a),—Si(Q₄₀₁)(Q₄₀₂)(Q₄₀₃), —N(Q₄₀₁)(Q₄₀₂), —B(Q₄₀₁)(Q₄₀₂), —C(═O)(Q₄₀₁),—S(═O)₂(Q₄₀₁), or —P(═O)(Q₄₀₁)(Q₄₀₂),

Q₄₀₁ to Q₄₀₃ may each independently be the same as described inconnection with Q₁,

xc11 and xc12 may each independently be an integer from 0 to 10, and

* and *′ in Formula 402 each indicate a binding site to M in Formula401.

In an embodiment, in Formula 402, i) X₄₀₁ may be nitrogen, and X₄₀₂ maybe carbon, or ii) each of X₄₀₁ and X₄₀₂ may be nitrogen.

In an embodiment, when xc1 in Formula 401 is 2 or more, two ring A₄₀₁ intwo or more of L₄₀₁(s) may be optionally linked to each other via T₄₀₂,which is a linking group, and two ring A₄₀₂ may optionally be linked toeach other via T₄₀₃, which is a linking group (see Compounds PD1 to PD4and PD7). T₄₀₂ and T₄₀₃ may each independently be the same as describedin connection with T₄₀₁.

L₄₀₂ in Formula 401 may be an organic ligand. In an embodiment, L₄₀₂ mayinclude a halogen group, a diketone group (for example, anacetylacetonate group), a carboxylic acid group (for example, apicolinate group), —C(═O), an isonitrile group, —CN group, a phosphorusgroup (for example, a phosphine group, a phosphite group, etc.), or anycombination thereof.

The phosphorescent dopant may include, for example, at least one ofcompounds PD1 to PD39, or any combination thereof:

Fluorescent Dopant

The fluorescent dopant may include an amine group-containing compound, astyryl group-containing compound, or any combination thereof.

In an embodiment, the fluorescent dopant may include a compoundrepresented by Formula 501:

wherein, in Formula 501,

Ar₅₀₁, L₅₀₁ to L₅₀₃, R₅₀₁, and R₅₀₂ may each independently be a C₃-C₆₀carbocyclic group unsubstituted or substituted with at least one R_(10a)or a C₁-C₆₀ heterocyclic group unsubstituted or substituted with atleast one R_(10a),

xd1 to xd3 may each independently be 0, 1, 2, or 3, and

xd4 may be 1, 2, 3, 4, 5, or 6.

In an embodiment, Ar₅₀₁ in Formula 501 may be a condensed cyclic group(for example, an anthracene group, a chrysene group, or a pyrene group)in which three or more monocyclic groups are condensed together.

In an embodiment, xd4 in Formula 501 may be 2.

In an embodiment, the fluorescent dopant may include: at least one ofcompounds FD1 to FD36; DPVBi; DPAVBi; or any combination thereof:

Delayed Fluorescence Material

The emission layer may include a delayed fluorescence material.

In the present specification, the delayed fluorescence material may beselected from compounds capable of emitting delayed fluorescence basedon a delayed fluorescence emission mechanism.

The delayed fluorescence material included in the emission layer may act(e.g., serve) as a host or a dopant depending on the type or kind ofother materials included in the emission layer.

In an embodiment, the difference between the triplet energy level (eV)of the delayed fluorescence material and the singlet energy level (eV)of the delayed fluorescence material may be greater than or equal to 0eV and less than or equal to 0.5 eV. When the difference between thetriplet energy level (eV) of the delayed fluorescence material and thesinglet energy level (eV) of the delayed fluorescence material satisfiesthe above-described range, up-conversion from the triplet state to thesinglet state of the delayed fluorescence materials may effectivelyoccur, and thus, the luminescence efficiency of the light-emittingdevice 10 may be improved.

In an embodiment, the delayed fluorescence material may include i) amaterial including at least one electron donor (for example, a πelectron-rich C₃-C₆₀ cyclic group, such as a carbazole group) and atleast one electron acceptor (for example, a sulfoxide group, a cyanogroup, and/or a π electron-deficient nitrogen-containing C₁-C₆₀ cyclicgroup), and ii) a material including a C₈-C₆₀ polycyclic group in whichtwo or more cyclic groups are condensed with each other while sharingboron (B).

Examples of the delayed fluorescence material may include at least oneof the following Compounds DF1 to DF9:

Electron Transport Region in Interlayer 130

The electron transport region may have: i) a single-layered structureconsisting of a single layer consisting of a single material, ii) asingle-layered structure consisting of a single layer including (e.g.,consisting of) a plurality of different materials, or iii) amulti-layered structure including a plurality of layers includingdifferent materials.

The electron transport region may include a hole blocking layer, anelectron transport layer, an electron injection layer, or anycombination thereof.

In an embodiment, the electron transport region may have an electrontransport layer/electron injection layer structure or a hole blockinglayer/electron transport layer/electron injection layer structure,wherein, in each structure, constituting layers are sequentially stackedfrom the emission layer in the respective stated order.

The electron transport region (for example, the hole blocking layerand/or the electron transport layer in the electron transport region)may include a metal-free compound including at least one πelectron-deficient nitrogen-containing C₁-C₆₀ cyclic group.

In an embodiment, the electron transport region may include a compoundrepresented by Formula 601 below:

[Ar₆₀₁]_(xe11)-[(L₆₀₁)_(xe11)-R₆₀₁]_(xe21)  Formula 601

wherein, in Formula 601,

Ar₆₀₁ and L₆₀₁ may each independently be a C₃-C₆₀ carbocyclic groupunsubstituted or substituted with at least one R_(10a) or a C₁-C₆heterocyclic group unsubstituted or substituted with at least oneR_(10a),

xe11 may be 1, 2, or 3,

xe1 may be 0, 1, 2, 3, 4, or 5,

R₆₀₁ may be a C₃-C₆₀ carbocyclic group unsubstituted or substituted withat least one R_(10a), a C₁-C₆₀ heterocyclic group unsubstituted orsubstituted with at least one R_(10a), —Si(Q₆₀₁)(Q₆₀₂)(Q₆₀₃),—C(═O)(Q₆₀₁), —S(═O)₂(Q₆₀₁), or —P(═O)(Q₆₀₁)(Q₆₀₂),

Q₆₀₁ to Q₆₀₃ may each independently be the same as described inconnection with Q₁,

xe21 may be 1, 2, 3, 4, or 5, and

at least one selected from Ar₆₀₁, L₆₀₁, and R₆₀₁ may each independentlybe a π electron-deficient nitrogen-containing C₁-C₆₀ cyclic groupunsubstituted or substituted with at least one R_(10a).

In an embodiment, when xe11 in Formula 601 is 2 or more, two or more ofAr₆₀₁(s) may be linked via a single bond.

In an embodiment, Ar₆₀₁ in Formula 601 may be a substituted orunsubstituted anthracene group.

In an embodiment, the electron transport region may include a compoundrepresented by Formula 601-1:

wherein, in Formula 601-1,

X₆₁₄ may be N or C(R₆₁₄), X₆₁₅ may be N or C(R₆₁₅), X₆₁₆ may be N orC(R₆₁₆), at least one of X₆₁₄ to X₆₁₆ may be N,

L₆₁₁ to L₆₁₃ may each independently be the same as those described inconnection with L₆₀₁,

xe611 to xe613 may each independently be the same as those described inconnection with xe1,

R₆₁₁ to R₆₁₃ may each independently be the same as those described inconnection with R₆₀₁, and

R₆₁₄ to R₆₁₆ may each independently be hydrogen, deuterium, —F, —Cl,—Br, —I, a hydroxyl group, a cyano group, a nitro group, a C₁-C₂₀ alkylgroup, a C₁-C₂₀ alkoxy group, a C₃-C₆₀ carbocyclic group unsubstitutedor substituted with at least one R_(10a), or a C₁-C₆₀ heterocyclic groupunsubstituted or substituted with at least one R_(10a).

In an embodiment, xe1 and xe611 to xe613 in Formulae 601 and 601-1 mayeach independently be 0, 1, or 2.

The electron transport region may include at least one of compounds ET1to ET45, 2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline (BCP),4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or anycombination thereof:

A thickness of the electron transport region may be from about 100 Å toabout 5,000 Å, for example, about 160 Å to about 4,000 Å. When theelectron transport region includes a hole blocking layer, an electrontransport layer, or any combination thereof, thicknesses of the holeblocking layer and the electron transport layer may each independentlybe from about 20 Å to about 1,000 Å, for example, from about 30 Å toabout 300 Å, and a thickness of the electron transport layer may be fromabout 100 Å to about 1,000 Å, for example, from about 150 Å to about 500Å. When the thicknesses of the hole blocking layer and/or electrontransport layer are within the ranges described above, satisfactoryelectron-transporting characteristics may be obtained without asubstantial increase in driving voltage.

The electron transport region (for example, the electron transport layerin the electron transport region) may further include, in addition tothe materials described above, a metal-containing material.

The metal-containing material may include an alkali metal complex, analkaline earth metal complex, or any combination thereof. A metal ion ofthe alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion,or a Cs ion, and a metal ion of the alkaline earth metal complex may bea Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion. A ligandcoordinated with the metal ion of the alkali metal complex or thealkaline earth-metal complex may include a hydroxyquinoline, ahydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, ahydroxyphenanthridine, a hydroxyphenyloxazole, a hydroxyphenylthiazole,a hydroxyphenyloxadiazole, a hydroxyphenylthiadiazole, ahydroxyphenylpyridine, a hydroxyphenylbenzimidazole, ahydroxyphenylbenzothiazole, a bipyridine, a phenanthroline, acyclopentadiene, or any combination thereof.

In an embodiment, the metal-containing material may include a Licomplex. The Li complex may include, for example, Compound ET-D1 (LiQ)or ET-D2:

The electron transport region may include an electron injection layerthat facilitates the injection of electrons from the second electrode150. The electron injection layer may be in direct contact with thesecond electrode 150.

The electron injection layer may have: i) a single-layered structureconsisting of a single layer consisting of a single material, ii) asingle-layered structure consisting of a single layer including (e.g.,consisting of) a plurality of different materials, or iii) amulti-layered structure including a plurality of layers includingdifferent materials.

The electron injection layer may include an alkali metal, an alkalineearth metal, a rare earth metal, an alkali metal-containing compound, analkaline earth metal-containing compound, a rare earth metal-containingcompound, an alkali metal complex, an alkaline earth metal complex, arare earth metal complex, or any combination thereof.

The alkali metal may include Li, Na, K, Rb, Cs, or any combinationthereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or anycombination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb,Gd, or any combination thereof.

The alkali metal-containing compound, the alkaline earthmetal-containing compound, and the rare earth metal-containing compoundmay include one or more oxides, halides (for example, fluorides,chlorides, bromides, and/or iodides), and/or tellurides of the alkalimetal, the alkaline earth metal, and the rare earth metal, or anycombination thereof.

The alkali metal-containing compound may include one or more alkalimetal oxides, such as Li₂O, Cs₂O, and/or K₂O, alkali metal halides, suchas LiF, NaF, CsF, KF, LiI, NaI, CsI, and/or KI, or any combinationthereof. The alkaline earth metal-containing compound may include analkaline earth metal compound (e.g., oxide), such as BaO, SrO, CaO,Ba_(x)Sr_(1-x)O (x is a real number satisfying the condition of 0<x<1),Ba_(x)Ca_(1-x)O (x is a real number satisfying the condition of 0<x<1),and/or the like. The rare earth metal-containing compound (e.g., halide)may include YbF₃, ScF₃, Sc₂O₃, Y₂O₃, Ce₂O₃, GdF₃, TbF₃, YbI₃, ScI₃,TbI₃, or any combination thereof. In an embodiment, the rare earthmetal-containing compound may include lanthanide metal telluride.Examples of the lanthanide metal telluride may include LaTe, CeTe, PrTe,NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe,La₂Te₃, Ce₂Te₃, Pr₂Te₃, Nd₂Te₃, Pm₂Te₃, Sm₂Te₃, Eu₂Te₃, Gd₂Te₃, Tb₂Te₃,Dy₂Te₃, Ho₂Te₃, Er₂Te₃, Tm₂Te₃, Yb₂Te₃, and Lu₂Te₃.

The alkali metal complex, the alkaline earth-metal complex, and the rareearth metal complex may include i) one of ions of the alkali metal, thealkaline earth metal, and the rare earth metal and ii), as a ligandbonded to the metal ion, for example, a hydroxyquinoline, ahydroxyisoquinoline, a hydroxybenzoquinoline, a hydroxyacridine, ahydroxyphenanthridine, a hydroxyphenyloxazole, a hydroxyphenylthiazole,a hydroxyphenyloxadiazole, a hydroxyphenylthiadiazole, ahydroxyphenylpyridine, a hydroxyphenyl benzimidazole, ahydroxyphenylbenzothiazole, a bipyridine, a phenanthroline, acyclopentadiene, or any combination thereof.

The electron injection layer may include (e.g., consist of) an alkalimetal, an alkaline earth metal, a rare earth metal, an alkalimetal-containing compound, an alkaline earth metal-containing compound,a rare earth metal-containing compound, an alkali metal complex, analkaline earth metal complex, a rare earth metal complex, or anycombination thereof, as described above. In an embodiment, the electroninjection layer may further include an organic material (for example, acompound represented by Formula 601).

In an embodiment, the electron injection layer may include (e.g.,consist of) i) an alkali metal-containing compound (for example, analkali metal halide), or ii) a) an alkali metal-containing compound (forexample, an alkali metal halide); and b) an alkali metal, an alkalineearth metal, a rare earth metal, or any combination thereof. In anembodiment, the electron injection layer may be a KI:Yb co-depositedlayer, an RbI:Yb co-deposited layer, and/or the like.

When the electron injection layer further includes an organic material,the alkali metal, the alkaline earth metal, the rare earth metal, thealkali metal-containing compound, the alkaline earth metal-containingcompound, the rare earth metal-containing compound, the alkali metalcomplex, the alkaline earth-metal complex, the rare earth metal complex,or any combination thereof may be homogeneously or non-homogeneouslydispersed in a matrix including the organic material.

A thickness of the electron injection layer may be in a range of about 1Å to about 100 Å, and, for example, about 3 Å to about 90 Å. When thethickness of the electron injection layer is within the ranges describedabove, satisfactory electron injection characteristics may be obtainedwithout a substantial increase in driving voltage.

Second Electrode 150

The second electrode 150 may be located on the interlayer 130 having theabove described structure. The second electrode 150 may be a cathode,which is an electron injection electrode, and as the material for thesecond electrode 150, a metal, an alloy, an electrically conductivecompound, or any combination thereof, each having a low work function,may be utilized.

In an embodiment, the second electrode 150 may include lithium (Li),silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li),calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag),ytterbium (Yb), silver-ytterbium (Ag—Yb), ITO, IZO, or a combinationthereof. The second electrode 150 may be a transmissive electrode, asemi-transmissive electrode, or a reflective electrode.

The second electrode 150 may have a single-layered structure or amulti-layered structure including two or more layers.

Capping Layer

A first capping layer may be located outside the first electrode 110,and/or a second capping layer may be located outside the secondelectrode 150. In an embodiment, the light-emitting device 10 may have astructure in which the first capping layer, the first electrode 110, theinterlayer 130, and the second electrode 150 are sequentially stacked inthis stated order, a structure in which the first electrode 110, theinterlayer 130, the second electrode 150, and the second capping layerare sequentially stacked in this stated order, or a structure in whichthe first capping layer, the first electrode 110, the interlayer 130,the second electrode 150, and the second capping layer are sequentiallystacked in this stated order.

Light generated in the emission layer of the interlayer 130 of thelight-emitting device 10 may be extracted (e.g., emitted) toward theoutside through the first electrode 110, which is a semi-transmissiveelectrode or a transmissive electrode, and the first capping layerand/or light generated in an emission layer of the interlayer 130 of thelight-emitting device 10 may be extracted (e.g., emitted) toward theoutside through the second electrode 150, which is a semi-transmissiveelectrode or a transmissive electrode, and the second capping layer.

The first capping layer and the second capping layer may increaseexternal emission efficiency according to the principle of constructiveinterference. Accordingly, the light extraction efficiency of thelight-emitting device 10 is increased, so that the emission efficiencyof the light-emitting device 10 may be improved.

Each of the first capping layer and second capping layer may include amaterial having a refractive index (at 589 nm) of 1.6 or more.

The first capping layer and the second capping layer may eachindependently be an organic capping layer including an organic material,an inorganic capping layer including an inorganic material, or anorganic-inorganic composite capping layer including an organic materialand an inorganic material.

At least one of the first capping layer or the second capping layer mayeach independently include one or more carbocyclic compounds,heterocyclic compounds, amine group-containing compounds, porphyrinderivatives, phthalocyanine derivatives, naphthalocyanine derivatives,alkali metal complexes, alkaline earth metal complexes, or anycombination thereof. The carbocyclic compound, the heterocycliccompound, and/or the amine group-containing compound may be optionallysubstituted with a substituent containing O, N, S, Se, Si, F, Cl, Br, I,or any combination thereof. In an embodiment, at least one of the firstcapping layer or the second capping layer may each independently includean amine group-containing compound.

In an embodiment, at least one of the first capping layer or the secondcapping layer may each independently include a compound represented byFormula 201, a compound represented by Formula 202, or any combinationthereof.

In an embodiment, at least one of the first capping layer or the secondcapping layer may each independently include at least one of compoundsHT28 to HT33, at least one of compounds CP1 to CP6, β-NPB, or anycombination thereof:

Electronic Apparatus

The light-emitting device may be included in one or more suitableelectronic apparatuses. In an embodiment, the electronic apparatusincluding the light-emitting device may be a light-emitting apparatus,an authentication apparatus, and/or the like.

The electronic apparatus (for example, light-emitting apparatus) mayfurther include, in addition to the light-emitting device, i) a colorfilter, ii) a color conversion layer, or iii) a color filter and a colorconversion layer. The color filter and/or the color conversion layer maybe located in at least one traveling direction of light emitted from thelight-emitting device. For example, the light emitted from thelight-emitting device may be blue light or white light. Thelight-emitting device may be the same as described above. In anembodiment, the color conversion layer may include the quantumdot-containing complex according to an embodiment of the disclosure.

The electronic apparatus may include a first substrate. The firstsubstrate may include a plurality of subpixel areas, the color filtermay include a plurality of color filter areas respectively correspondingto the plurality of subpixel areas, and the color conversion layer mayinclude a plurality of color conversion areas respectively correspondingto the plurality of subpixel areas.

A pixel-defining film may be located among (e.g., between) the pluralityof subpixel areas to define each of the plurality of subpixel areas.

The color filter may further include a plurality of color filter areasand light-shielding patterns located among (e.g., between) the pluralityof color filter areas, and the color conversion layer may include aplurality of color conversion areas and light-shielding patterns locatedamong (e.g., between) the plurality of color conversion areas.

The plurality of color filter areas (or the plurality of colorconversion areas) may include a first area emitting a first color light,a second area emitting a second color light, and/or a third areaemitting a third color light, and the first color light, the secondcolor light, and/or the third color light may have different maximumemission wavelengths from one another. In an embodiment, the first colorlight may be red light, the second color light may be green light, andthe third color light may be blue light. In an embodiment, the colorfilter areas (or the color conversion areas) may include quantum dots.In one or more embodiments, the first area may include a red quantumdot, the second area may include a green quantum dot, and the third areamay not include (e.g., may exclude) any quantum dots. The quantum dot isthe same as described in the present specification. The first area, thesecond area, and/or the third area may each further include a scatterer.

In an embodiment, the light-emitting device may be to emit a firstlight, the first area may be to absorb the first light to emit a firstfirst-color light, the second area may be to absorb the first light toemit a second first-color light, and the third area may be to absorb thefirst light to emit a third first-color light. In this regard, the firstfirst-color light, the second first-color light, and the thirdfirst-color light may have different maximum emission wavelengths. Inone or more embodiments, the first light may be blue light, the firstfirst-color light may be red light, the second first-color light may begreen light, and the third first-color light may be blue light.

The electronic apparatus may further include a thin-film transistor inaddition to the light-emitting device as described above. The thin-filmtransistor may include a source electrode, a drain electrode, and anactivation layer, wherein the source electrode or the drain electrodemay be electrically connected to the first electrode or the secondelectrode of the light-emitting device.

The thin-film transistor may further include a gate electrode, a gateinsulating film, etc.

The activation layer may include crystalline silicon, amorphous silicon,organic semiconductor, oxide semiconductor, and/or the like.

The electronic apparatus may further include a sealing portion forsealing the light-emitting device. The sealing portion and/or the colorconversion layer may be located between the color filter and thelight-emitting device. The sealing portion allows light from thelight-emitting device to be extracted to the outside, while concurrently(e.g., simultaneously) preventing or reducing the penetration of ambientair and/or moisture into the light-emitting device. The sealing portionmay be a sealing substrate including a transparent glass substrateand/or a plastic substrate. The sealing portion may be a thin-filmencapsulation layer including at least one layer of an organic layerand/or an inorganic layer. When the sealing portion is a thin filmencapsulation layer, the electronic apparatus may be flexible.

Various suitable functional layers may be additionally located on thesealing portion, in addition to the color filter and/or the colorconversion layer, according to the usage of the electronic apparatus.The functional layers may include a touch screen layer, a polarizinglayer, and/or the like. The touch screen layer may be apressure-sensitive touch screen layer, a capacitive touch screen layer,or an infrared touch screen layer. The authentication apparatus may be,for example, a biometric authentication apparatus that authenticates anindividual by utilizing biometric information of a living body (forexample, fingertips, pupils, etc.).

The authentication apparatus may further include, in addition to thelight-emitting device, a biometric information collector.

The electronic apparatus may be applied to one or more suitabledisplays, light sources, lighting, personal computers (for example, amobile personal computer), mobile phones, digital cameras, electronicorganizers (e.g., diaries), electronic dictionaries, electronic gamemachines, medical instruments (for example, electronic thermometers,sphygmomanometers, blood glucose meters, pulse measurement devices,pulse wave measurement devices, electrocardiogram displays, ultrasonicdiagnostic devices, and/or endoscope displays), fish finders, one ormore suitable measuring instruments, meters (for example, meters for avehicle, an aircraft, and/or a vessel), projectors, and/or the like.[Description of FIGS. 2 and 3 ]

FIG. 2 is a cross-sectional view of an electronic apparatus according toan embodiment of the disclosure.

The electronic apparatus of FIG. 2 includes a substrate 100, a thin-filmtransistor (TFT), a light-emitting device, and an encapsulation portion300 that seals the light-emitting device.

The substrate 100 may be a flexible substrate, a glass substrate, or ametal substrate. A buffer layer 210 may be formed on the substrate 100.The buffer layer 210 may prevent or reduce penetration of impuritiesthrough the substrate 100 and may provide a flat surface on thesubstrate 100.

A TFT may be located on the buffer layer 210. The TFT may include anactivation layer 220, a gate electrode 240, a source electrode 260, anda drain electrode 270.

The activation layer 220 may include an inorganic semiconductor such assilicon and/or polysilicon, an organic semiconductor, and/or an oxidesemiconductor, and may include a source region, a drain region and achannel region.

A gate insulating film 230 for insulating the activation layer 220 fromthe gate electrode 240 may be located on the activation layer 220, andthe gate electrode 240 may be located on the gate insulating film 230.

An interlayer insulating film 250 is located on the gate electrode 240.The interlayer insulating film 250 may be placed between the gateelectrode 240 and the source electrode 260 to insulate the gateelectrode 240 from the source electrode 260 and between the gateelectrode 240 and the drain electrode 270 to insulate the gate electrode240 from the drain electrode 270.

The source electrode 260 and the drain electrode 270 may be located onthe interlayer insulating film 250. The interlayer insulating film 250and the gate insulating film 230 may be formed to expose the sourceregion and the drain region of the activation layer 220, and the sourceelectrode 260 and the drain electrode 270 may be in contact with theexposed portions of the source region and the drain region of theactivation layer 220.

The TFT is electrically connected to a light-emitting device to drivethe light-emitting device, and is covered by a passivation layer 280.The passivation layer 280 may include an inorganic insulating film, anorganic insulating film, or a combination thereof. A light-emittingdevice is provided on the passivation layer 280. The light-emittingdevice may include a first electrode 110, an interlayer 130, and asecond electrode 150.

The first electrode 110 may be formed on the passivation layer 280. Thepassivation layer 280 does not completely cover the drain electrode 270and exposes a portion of the drain electrode 270, and the firstelectrode 110 is connected to the exposed portion of the drain electrode270.

A pixel-defining layer 290 containing an insulating material may belocated on the first electrode 110. The pixel-defining layer 290 exposesa region of the first electrode 110, and an interlayer 130 may be formedin the exposed region of the first electrode 110. The pixel-defininglayer 290 may be a polyimide and/or polyacrylic organic film. In one ormore embodiments, at least some layers of the interlayer 130 may extendbeyond the upper portion of the pixel-defining layer 290 to be locatedin the form of a common layer.

The second electrode 150 may be located on the interlayer 130, and acapping layer 170 may be additionally formed on the second electrode150. The capping layer 170 may be formed to cover the second electrode150.

The encapsulation portion 300 may be located on the capping layer 170.The encapsulation portion 300 may be located on a light-emitting deviceto protect the light-emitting device from moisture and/or oxygen. Theencapsulation portion 300 may include: an inorganic film includingsilicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indiumzinc oxide, or any combination thereof; an organic film includingpolyethylene terephthalate, polyethylene naphthalate, polycarbonate,polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate,hexamethyldisiloxane, an acrylic resin (for example, polymethylmethacrylate, polyacrylic acid, and/or the like), an epoxy-based resin(for example, aliphatic glycidyl ether (AGE), and/or the like), or acombination thereof; or a combination of the inorganic film and theorganic film.

FIG. 3 is a cross-sectional view of an electronic apparatus according toan embodiment of the disclosure.

The electronic apparatus of FIG. 3 is the same as the electronicapparatus of FIG. 2 , except that a light-shielding pattern 500 and afunctional region 400 are additionally arranged on the encapsulationportion 300. The functional region 400 may be a combination of i) acolor filter area, ii) a color conversion area, or iii) a combination ofthe color filter area and the color conversion area. In an embodiment,the light-emitting device included in the electronic apparatus of FIG. 3may be a tandem light-emitting device.

Manufacture Method

Respective layers included in the hole transport region, the emissionlayer, and respective layers included in the electron transport regionmay be formed in a certain region by utilizing one or more suitablemethods selected from vacuum deposition, spin coating, casting,Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, andlaser-induced thermal imaging.

When layers constituting the hole transport region, the emission layer,and layers constituting the electron transport region are formed byvacuum deposition, the vacuum deposition may be performed at adeposition temperature of about 100° C. to about 500° C., a vacuumdegree of about 10⁻⁸ torr to about 10⁻³ torr, and a deposition speed ofabout 0.01 Å/sec to about 100 Å/sec, depending on a material to beincluded in a layer to be formed and the structure of a layer to beformed.

When layers constituting the hole transport region, the emission layer,and layers constituting the electron transport region are formed by spincoating, the spin coating may be performed at a coating speed of about2,000 rpm to about 5,000 rpm and at a heat treatment temperature ofabout 80° C. to 200° C. by taking into account a material to be includedin a layer to be formed and the structure of a layer to be formed.

An ink composition according to one or more embodiments may include thequantum dot-containing complex, a monomer, a scatterer, and aninitiator. An amount of the monomer may be in a range of about 70 partsby weight to about 150 parts by weight based on 100 parts by weight ofthe quantum dot-containing complex, an amount of the scatterer may be ina range of about 10 parts by weight to about 50 parts by weight based on100 parts by weight of the quantum dot-containing complex, and an amountof the initiator may be in a range of about 0.1 parts by weight to about10 parts by weight based on 100 parts by weight of the quantumdot-containing complex.

In an embodiment, the monomer may be an acrylate-based compound, and maybe, for example 1,6-hexanediol diacrylate.

As the scatterer, any suitable particle that scatters light may beutilized. A size of the scatterer may be in a range of, for example,about 100 nm to about 300 nm.

When the size thereof is less than about 100 nm or is greater than about300 nm, the particle may not act (e.g., serve) as a scatterer.

The initiator may be a radical compound generally utilized for monomerpolymerization.

The ink composition may be utilized in a solution process such as a spincoating method and/or an inkjet printing method, and when an amount ofeach component is within the ranges described above, the ink compositionis suitable for the solution process.

General Definition of Substituents

The term “C₃-C₆₀ carbocyclic group” as used herein refers to a cyclicgroup consisting of only carbon atoms as a ring-forming atom and havingthree to sixty carbon atoms, and the term “C₁-C₆₀ heterocyclic group” asused herein refers to a cyclic group that has one to sixty carbon atomsand further has, in addition to carbon atoms, a heteroatom as aring-forming atom. The C₃-C₆₀ carbocyclic group and the C₁-C₆₀heterocyclic group may each be a monocyclic group consisting of one ringor a polycyclic group in which two or more rings are condensed with eachother. In an embodiment, the C₁-C₆₀ heterocyclic group has 3 to 61ring-forming atoms.

The term “cyclic group” as used herein may include the C₃-C₆₀carbocyclic group and the C₁-C₆₀ heterocyclic group.

The term “π electron-rich C₃-C₆₀ cyclic group” as used herein refers toa cyclic group that has three to sixty carbon atoms and does not include*—N═*′ as a ring-forming moiety, and the term “π electron-deficientnitrogen-containing C₁-C₆₀ cyclic group” as used herein refers to aheterocyclic group that has one to sixty carbon atoms and includes*—N═*′ as a ring-forming moiety.

In an embodiment,

the C₃-C₆₀ carbocyclic group may be i) group T1 or ii) a condensedcyclic group in which two or more groups T1 are condensed with eachother (for example, the C₃-C₆₀ carbocyclic group may be acyclopentadiene group, an adamantane group, a norbornane group, abenzene group, a pentalene group, a naphthalene group, an azulene group,an indacene group, an acenaphthylene group, a phenalene group, aphenanthrene group, an anthracene group, a fluoranthene group, atriphenylene group, a pyrene group, a chrysene group, a perylene group,a pentaphene group, a heptalene group, a naphthacene group, a picenegroup, a hexacene group, a pentacene group, a rubicene group, a coronenegroup, an ovalene group, an indene group, a fluorene group, aspiro-bifluorene group, a benzofluorene group, an indenophenanthrenegroup, or an indenoanthracene group),

the C₁-C₆₀ heterocyclic group may be i) group T2, ii) a condensed cyclicgroup in which two or more groups T2 are condensed with each other, oriii) a condensed cyclic group in which at least one group T2 and atleast one group T1 are condensed with each other (for example, theC₁-C₆₀ heterocyclic group may be a pyrrole group, a thiophene group, afuran group, an indole group, a benzoindole group, a naphthoindolegroup, an isoindole group, a benzoisoindole group, a naphthoisoindolegroup, a benzosilole group, a benzothiophene group, a benzofuran group,a carbazole group, a dibenzosilole group, a dibenzothiophene group, adibenzofuran group, an indenocarbazole group, an indolocarbazole group,a benzofurocarbazole group, a benzothienocarbazole group, abenzosilolocarbazole group, a benzoindolocarbazole group, abenzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophenegroup, a benzonaphthosilole group, a benzofurodibenzofuran group, abenzofurodibenzothiophene group, a benzothienodibenzothiophene group, apyrazole group, an imidazole group, a triazole group, an oxazole group,an isoxazole group, an oxadiazole group, a thiazole group, anisothiazole group, a thiadiazole group, a benzopyrazole group, abenzimidazole group, a benzoxazole group, a benzoisoxazole group, abenzothiazole group, a benzoisothiazole group, a pyridine group, apyrimidine group, a pyrazine group, a pyridazine group, a triazinegroup, a quinoline group, an isoquinoline group, a benzoquinoline group,a benzoisoquinoline group, a quinoxaline group, a benzoquinoxalinegroup, a quinazoline group, a benzoquinazoline group, a phenanthrolinegroup, a cinnoline group, a phthalazine group, a naphthyridine group, animidazopyridine group, an imidazopyrimidine group, an imidazotriazinegroup, an imidazopyrazine group, an imidazopyridazine group, anazacarbazole group, an azafluorene group, an azadibenzosilole group, anazadibenzothiophene group, an azadibenzofuran group, etc.),

the π electron-rich C₃-C₆₀ cyclic group may be i) group T1, ii) acondensed cyclic group in which two or more groups T1 are condensed witheach other, iii) group T3, iv) a condensed cyclic group in which two ormore groups T3 are condensed with each other, or v) a condensed cyclicgroup in which at least one group T3 and at least one group T1 arecondensed with each other (for example, the π electron-rich C₃-C₆₀cyclic group may be the C₃-C₆₀ carbocyclic group, a 1H-pyrrole group, asilole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, athiophene group, a furan group, an indole group, a benzoindole group, anaphthoindole group, an isoindole group, a benzoisoindole group, anaphthoisoindole group, a benzosilole group, a benzothiophene group, abenzofuran group, a carbazole group, a dibenzosilole group, adibenzothiophene group, a dibenzofuran group, an indenocarbazole group,an indolocarbazole group, a benzofurocarbazole group, abenzothienocarbazole group, a benzosilolocarbazole group, abenzoindolocarbazole group, a benzocarbazole group, a benzonaphthofurangroup, a benzonaphthothiophene group, a benzonaphthosilole group, abenzofurodibenzofuran group, a benzofurodibenzothiophene group, abenzothienodibenzothiophene group, etc.),

the π electron-deficient nitrogen-containing C₁-C₆₀ cyclic group may bei) group T4, ii) a condensed cyclic group in which two or more group T4are condensed with each other, iii) a condensed cyclic group in which atleast one group T4 and at least one group T1 are condensed with eachother, iv) a condensed cyclic group in which at least one group T4 andat least one group T3 are condensed with each other, or v) a condensedcyclic group in which at least one group T4, at least one group T1, andat least one group T3 are condensed with one another (for example, the πelectron-deficient nitrogen-containing C₁-C₆₀ cyclic group may be apyrazole group, an imidazole group, a triazole group, an oxazole group,an isoxazole group, an oxadiazole group, a thiazole group, anisothiazole group, a thiadiazole group, a benzopyrazole group, abenzimidazole group, a benzoxazole group, a benzoisoxazole group, abenzothiazole group, a benzoisothiazole group, a pyridine group, apyrimidine group, a pyrazine group, a pyridazine group, a triazinegroup, a quinoline group, an isoquinoline group, a benzoquinoline group,a benzoisoquinoline group, a quinoxaline group, a benzoquinoxalinegroup, a quinazoline group, a benzoquinazoline group, a phenanthrolinegroup, a cinnoline group, a phthalazine group, a naphthyridine group, animidazopyridine group, an imidazopyrimidine group, an imidazotriazinegroup, an imidazopyrazine group, an imidazopyridazine group, anazacarbazole group, an azafluorene group, an azadibenzosilole group, anazadibenzothiophene group, an azadibenzofuran group, etc.),

group T1 may be a cyclopropane group, a cyclobutane group, acyclopentane group, a cyclohexane group, a cycloheptane group, acyclooctane group, a cyclobutene group, a cyclopentene group, acyclopentadiene group, a cyclohexene group, a cyclohexadiene group, acycloheptene group, an adamantane group, a norbornane (or abicyclo[2.2.1]heptane) group, a norbornene group, abicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, abicyclo[2.2.2]octane group, or a benzene group,

group T2 may be a furan group, a thiophene group, a 1H-pyrrole group, asilole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, animidazole group, a pyrazole group, a triazole group, a tetrazole group,an oxazole group, an isoxazole group, an oxadiazole group, a thiazolegroup, an isothiazole group, a thiadiazole group, an azasilole group, anazaborole group, a pyridine group, a pyrimidine group, a pyrazine group,a pyridazine group, a triazine group, a tetrazine group, a pyrrolidinegroup, an imidazolidine group, a dihydropyrrole group, a piperidinegroup, a tetrahydropyridine group, a dihydropyridine group, ahexahydropyrimidine group, a tetrahydropyrimidine group, adihydropyrimidine group, a piperazine group, a tetrahydropyrazine group,a dihydropyrazine group, a tetrahydropyridazine group, or adihydropyridazine group,

group T3 may be a furan group, a thiophene group, a 1H-pyrrole group, asilole group, or a borole group, and

group T4 may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazolegroup, a pyrazole group, a triazole group, a tetrazole group, an oxazolegroup, an isoxazole group, an oxadiazole group, a thiazole group, anisothiazole group, a thiadiazole group, an azasilole group, an azaborolegroup, a pyridine group, a pyrimidine group, a pyrazine group, apyridazine group, a triazine group, or a tetrazine group.

The terms “cyclic group”, “C₃-C₆₀ carbocyclic group”, “C₁-C₆₀heterocyclic group”, “π electron-rich C₃-C₆₀ cyclic group”, or “πelectron-deficient nitrogen-containing C₁-C₆₀ cyclic group” as usedherein may each refer to a group condensed to any cyclic group, amonovalent group, or a polyvalent group (for example, a divalent group,a trivalent group, a tetravalent group, etc.), depending on thestructure of a formula in connection with which the terms are used. Inan embodiment, “a benzene group” may be a benzo group, a phenyl group, aphenylene group, or the like, which may be easily understood by one ofordinary skill in the art according to the structure of a formulaincluding the “benzene group.”

In an embodiment, examples of the monovalent C₃-C₆₀ carbocyclic groupand the monovalent C₁-C₆₀ heterocyclic group may include a C₃-C₁₀cycloalkyl group, a C₁-C₁₀ heterocycloalkyl group, a C₃-C₁₀ cycloalkenylgroup, a C₁-C₁₀ heterocycloalkenyl group, a C₆-C₆₀ aryl group, a C₁-C₆heteroaryl group, a monovalent non-aromatic condensed polycyclic group,and a monovalent non-aromatic condensed heteropolycyclic group, andexamples of the divalent C₃-C₆₀ carbocyclic group and the divalentC₁-C₆₀ heterocyclic group may include a C₃-C₁₀ cycloalkylene group, aC₁-C₁₀ heterocycloalkylene group, a C₃-C₁₀ cycloalkenylene group, aC₁-C₁₀ heterocycloalkenylene group, a C₆-C₆₀ arylene group, a C₁-C₆₀heteroarylene group, a divalent non-aromatic condensed polycyclic group,and a divalent non-aromatic condensed heteropolycyclic group.

The term “C₁-C₆₀ alkyl group” as used herein refers to a linear orbranched aliphatic hydrocarbon saturated monovalent group that has oneto sixty carbon atoms, and examples thereof may include a methyl group,an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group,a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentylgroup, a tert-pentyl group, a neopentyl group, an isopentyl group, asec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexylgroup, an isohexyl group, a sec-hexyl group, a tert-hexyl group, ann-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptylgroup, an n-octyl group, an isooctyl group, a sec-octyl group, atert-octyl group, an n-nonyl group, an isononyl group, a sec-nonylgroup, a tert-nonyl group, an n-decyl group, an isodecyl group, asec-decyl group, and a tert-decyl group. The term “C₁-C₆₀ alkylenegroup” as used herein refers to a divalent group having the samestructure as the C₁-C₆ alkyl group.

The term “C₂-C₆₀ alkenyl group” as used herein refers to a monovalenthydrocarbon group having at least one carbon-carbon double bond in themiddle or at a terminal end (e.g., the terminus) of the C₂-C₆₀ alkylgroup, and examples thereof may include an ethenyl group, a propenylgroup, and a butenyl group. The term “C₂-C₆₀ alkenylene group” as usedherein refers to a divalent group having the same structure as theC₂-C₆₀ alkenyl group.

The term “C₂-C₆₀ alkynyl group” as used herein refers to a monovalenthydrocarbon group having at least one carbon-carbon triple bond in themiddle or at a terminal end (e.g., the terminus) of the C₂-C₆₀ alkylgroup, and examples thereof may include an ethynyl group and a propynylgroup. The term “C₂-C₆₀ alkynylene group” as used herein refers to adivalent group having the same structure as the C₂-C₆₀ alkynyl group.

The term “C₁-C₆₀ alkoxy group” as used herein refers to a monovalentgroup represented by —OA₁₀₁ (wherein A₁₁ is the C₁-C₆₀ alkyl group), andexamples thereof may include a methoxy group, an ethoxy group, and anisopropyloxy group.

The term “C₃-C₁₀ cycloalkyl group” as used herein refers to a monovalentsaturated hydrocarbon cyclic group having 3 to 10 carbon atoms, andexamples thereof may include a cyclopropyl group, a cyclobutyl group, acyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctylgroup, an adamantanyl group, a norbornanyl group (or abicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, abicyclo[2.1.1]hexyl group, and a bicyclo[2.2.2]octyl group. The term“C₃-C₁₀ cycloalkylene group” as used herein refers to a divalent grouphaving the same structure as the C₃-C₁₀ cycloalkyl group.

The term “C₁-C₁₀ heterocycloalkyl group” as used herein refers to amonovalent cyclic group that further includes, in addition to 1 to 10carbon atoms, at least one heteroatom as a ring-forming atom, andexamples thereof may include a 1,2,3,4-oxatriazolidinyl group, atetrahydrofuranyl group, and a tetrahydrothiophenyl group. The term“C₁-C₁₀ heterocycloalkylene group” as used herein refers to a divalentgroup having the same structure as the C₁-C₁₀ heterocycloalkyl group.

The term “C₃-C₁₀ cycloalkenyl group” as used herein refers to amonovalent cyclic group that has three to ten carbon atoms and at leastone carbon-carbon double bond in the ring thereof and no aromaticity,and examples thereof may include a cyclopentenyl group, a cyclohexenylgroup, and a cycloheptenyl group. The term “C₃-C₁₀ cycloalkenylenegroup” as used herein refers to a divalent group having the samestructure as the C₃-C₁₀ cycloalkenyl group.

The term “C₁-C₁₀ heterocycloalkenyl group” as used herein refers to amonovalent cyclic group that has, in addition to 1 to 10 carbon atoms,at least one heteroatom as a ring-forming atom, and at least one doublebond (e.g., carbon-carbon double bond) in the cyclic structure thereof.Examples of the C₁-C₁₀ heterocycloalkenyl group may include a4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, anda 2,3-dihydrothiophenyl group. The term “C₁-C₁₀ heterocycloalkenylenegroup” as used herein refers to a divalent group having the samestructure as the C₁-C₁₀ heterocycloalkenyl group.

The term “C₆-C₆₀ aryl group” as used herein refers to a monovalent grouphaving a carbocyclic aromatic system having six to sixty carbon atoms,and the term “C₆-C₆₀ arylene group” as used herein refers to a divalentgroup having a carbocyclic aromatic system having six to sixty carbonatoms. Examples of the C₆-C₆₀ aryl group may include a phenyl group, apentalenyl group, a naphthyl group, an azulenyl group, an indacenylgroup, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group,an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, apyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenylgroup, a heptalenyl group, a naphthacenyl group, a picenyl group, ahexacenyl group, a pentacenyl group, a rubicenyl group, a coronenylgroup, a fluorenyl group, and an ovalenyl group. When the C₆-C₆₀ arylgroup and the C₆-C₆₀ arylene group each independently include two ormore rings, the two or more rings may be condensed with each other.

The term “C₁-C₆₀ heteroaryl group” as used herein refers to a monovalentgroup having a heterocyclic aromatic system that has, in addition to 1to 60 carbon atoms, at least one heteroatom as a ring-forming atom. Theterm “C₁-C₆₀ heteroarylene group” as used herein refers to a divalentgroup having a heterocyclic aromatic system that has, in addition to 1to 60 carbon atoms, at least one heteroatom as a ring-forming atom.Examples of the C₁-C₆₀ heteroaryl group may include a pyridinyl group, apyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinylgroup, a quinolinyl group, a benzoquinolinyl group, an isoquinolinylgroup, a benzoisoquinolinyl group, a quinoxalinyl group, abenzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinylgroup, a cinnolinyl group, a phenanthrolinyl group, a phthalazinylgroup, a carbazolyl group, a dibenzofuranyl group, a dibenzothiofuranylgroup, and a naphthyridinyl group. When the C₁-C₆ heteroaryl group andthe C₁-C₆₀ heteroarylene group each include two or more rings, the ringsmay be condensed with each other.

The term “monovalent non-aromatic condensed polycyclic group” as usedherein refers to a monovalent group having two or more rings condensedto each other, only carbon atoms (for example, having 8 to 60 carbonatoms) as ring-forming atoms, and non-aromaticity in its molecularstructure when considered as a whole. Examples of the monovalentnon-aromatic condensed polycyclic group may include an indenyl group, afluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, anindenophenanthrenyl group, an adamantyl group, and an indeno anthracenylgroup. The term “divalent non-aromatic condensed polycyclic group” asused herein refers to a divalent group having the same structure as amonovalent non-aromatic condensed polycyclic group.

The term “monovalent non-aromatic condensed heteropolycyclic group” asused herein refers to a monovalent group having two or more ringscondensed to each other, at least one heteroatom other than carbon atoms(for example, having 1 to 60 carbon atoms) as ring-forming atoms, andnon-aromaticity in its molecular structure when considered as a whole.Examples of the monovalent non-aromatic condensed heteropolycyclic groupinclude a pyrrolyl group, a thiophenyl group, a furanyl group, anindolyl group, a benzoindolyl group, a naphtho indolyl group, anisoindolyl group, a benzoisoindolyl group, a naphthoisoindolyl group, abenzosilolyl group, a benzothiophenyl group, a benzofuranyl group, acarbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, adibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, anazadibenzosilolyl group, an azadibenzothiophenyl group, anazadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, atriazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolylgroup, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, athiadiazolyl group, a benzopyrazolyl group, a benzimidazolyl group, abenzoxazolyl group, a benzothiazolyl group, a benzoxadiazolyl group, abenzothiadiazolyl group, an imidazopyridinyl group, animidazopyrimidinyl group, an imidazotriazinyl group, an imidazopyrazinylgroup, an imidazopyridazinyl group, an indenocarbazolyl group, anindolocarbazolyl group, a benzofurocarbazolyl group, abenzothienocarbazolyl group, a benzosilolocarbazolyl group, abenzoindolocarbazolyl group, a benzocarbazolyl group, abenzonaphthofuranyl group, a benzonaphthothiophenyl group, abenzonaphthosilolyl group, a benzofurodibenzofuranyl group, abenzofurodibenzothiophenyl group, an azaadamantyl group, and abenzothienodibenzothiophenyl group. The term “divalent non-aromaticcondensed heteropolycyclic group” as used herein refers to a divalentgroup having the same structure as a monovalent non-aromatic condensedheteropolycyclic group.

The term “C₆-C₆₀ aryloxy group” as used herein refers to a monovalentgroup represented by —OA₁₀₂ (wherein A₁₀₂ is the C₆-C₆₀ aryl group), andthe term “C₆-C₆₀ arylthio group” as used herein refers to a monovalentgroup represented by —SA₁₀₃ (wherein A₁₀₃ is the C₆-C₆₀ aryl group).

The term “C₇-C₆₀ aryl alkyl group” as used herein refers to a monovalentgroup represented by -A₁₀₄A₁₀₅ (where A₁₀₄ may be a C₁-C₅₄ alkylenegroup, and A₁₀₅ may be a C₆-C₅₉ aryl group), and the term “C₂-C₆₀heteroaryl alkyl group” as used herein refers to a monovalent grouprepresented by -A₁₀₆A₁₀₇ (where A₁₀₆ may be a C₁-C₅₉ alkylene group, andA₁₀₇ may be a C₁-C₅₉ heteroaryl group).

R_(10a) may be:

deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, or a nitrogroup;

a C₁-C₆₀ alkyl group, a C₂-C₆₀ alkenyl group, a C₂-C₆₀ alkynyl group, ora C₁-C₆₀ alkoxy group, each unsubstituted or substituted with deuterium,—F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, aC₃-C₆₀ carbocyclic group, a C₁-C₆₀ heterocyclic group, a C₆-C₆₀ aryloxygroup, a C₆-C₆₀ arylthio group, a C₇-C₆₀ aryl alkyl group, a C₂-C₆₀heteroaryl alkyl group, —Si(Q₁₁)(Q₁₂)(Q₁₃), —N(Q₁₁)(Q₁₂), —B(Q₁₁)(Q₁₂),—C(═O)(Q₁₁), —S(═O)₂(Q₁₁), —P(═O)(Q₁₁)(Q₁₂), or any combination thereof;

a C₃-C₆₀ carbocyclic group, a C₁-C₆ heterocyclic group, a C₆-C₆₀ aryloxygroup, a C₆-C₆₀ arylthio group, a C₇-C₆₀ aryl alkyl group, or a C₂-C₆₀heteroaryl alkyl group, each unsubstituted or substituted withdeuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitrogroup, a C₁-C₆₀ alkyl group, a C₂-C₆₀ alkenyl group, a C₂-C₆₀ alkynylgroup, a C₁-C₆₀ alkoxy group, a C₃-C₆₀ carbocyclic group, a C₁-C₆₀heterocyclic group, a C₆-C₆₀ aryloxy group, a C₆-C₆₀ arylthio group, aC₇-C₆₀ aryl alkyl group, a C₂-C₆₀ heteroaryl alkyl group,—Si(Q₂₁)(Q₂₂)(Q₂₃), —N(Q₂₁)(Q₂₂), —B(Q₂₁)(Q₂₂), —C(═O)(Q₂₁),—S(═O)₂(Q₂₁), —P(═O)(Q₂₁)(Q₂₂), or any combination thereof; or

—Si(Q₃₁)(Q₃₂)(Q₃₃), —N(Q₃₁)(Q₃₂), —B(Q₃₁)(Q₃₂), —C(═O)(Q₃₁),—S(═O)₂(Q₃₁), or —P(═O)(Q₃₁)(Q₃₂).

Q₁ to Q₃, Q₁₁ to Q₁₃, Q₂₁ to Q₂₃, and Q₃₁ to Q₃₃ may each independentlybe: hydrogen; deuterium; —F; —Cl; —Br; —I; a hydroxyl group; a cyanogroup; a nitro group; a C₁-C₆ alkyl group; a C₂-C₆₀ alkenyl group; aC₂-C₆₀ alkynyl group; a C₁-C₆₀ alkoxy group; or a C₃-C₆₀ carbocyclicgroup, a C₁-C₆₀ heterocyclic group, a C₇-C₆₀ aryl alkyl group, or aC₂-C₆₀ heteroaryl alkyl group, each unsubstituted or substituted withdeuterium, —F, a cyano group, a C₁-C₆₀ alkyl group, a C₁-C₆ alkoxygroup, a phenyl group, a biphenyl group, or any combination thereof.

The term “hetero atom” as used herein refers to any atom other than acarbon atom. Examples of the heteroatom may include O, S, N, P, Si, B,Ge, Se, or any combination thereof.

The term “the third-row transition metal” as used herein may refer tohafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os),iridium (Ir), platinum (Pt), gold (Au), and/or the like.

The term “Ph” as used herein refers to a phenyl group, the term “Me” asused herein refers to a methyl group, the term “Et” as used hereinrefers to an ethyl group, the term “tert-Bu” or “Bu^(t)” as used hereinrefers to a tert-butyl group, and the term “OMe” as used herein refersto a methoxy group.

The term “biphenyl group” as used herein refers to “a phenyl groupsubstituted with a phenyl group.” In other words, the “biphenyl group”is a substituted phenyl group having a C₆-C₆₀ aryl group as asubstituent.

The term “terphenyl group” as used herein refers to “a phenyl groupsubstituted with a biphenyl group”. In other words, the “terphenylgroup” is a substituted phenyl group having, as a substituent, a C₆-C₆₀aryl group substituted with a C₆-C₆₀ aryl group.

The maximum number of carbon atoms in this substituent definitionsection is an example only. In an embodiment, the maximum carbon numberof 60 in the C₁-C₆₀ alkyl group is an example, and the definition of thealkyl group equally applies to a C₁-C₂₀ alkyl group. The same alsoapplies to other cases.

* and *′ as used herein, unless defined otherwise, each refer to abinding site to a neighboring atom in a corresponding formula.

Hereinafter, a compound and light-emitting device according to anembodiment of the disclosure will be described in more detail withreference to the following examples.

EXAMPLES Manufacture of Light-Emitting Device Preparation of QuantumDot-Containing Complex (1) Quantum Dot-Containing Complex of Ligand2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid

3 g of InP quantum dots coordinated with oleic acid was added to 100 mLof chloroform, followed by stirring at room temperature for an hour.Next, 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid was addedthereto, followed by stirring at 70° C. for 2 hours, and the quantum dotcoordination ligand was thereby exchanged from oleic acid to2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

Next, 300 mL of n-hexane was added thereto, the result was subjected tocentrifugation (9,500 rpm for 3 min), and a precipitate wasvacuum-dried, to thereby prepare a quantum dot-containing complex.

(2) Quantum Dot-Containing Complex of Ligands2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid and3-(2-(2-Methoxyethoxy)Ethoxy)Propanoic Acid (1:1 Ligands Weight Ratio)

A quantum dot-containing complex was prepared in substantially the samemanner as in (1), except that two ligands including 0.45 g of2,5,8,11,14-pentaoxaheptadecan-17-oic acid and 0.45 g of3-(2-(2-methoxyethoxy)ethoxy)propanoic acid were utilized instead of oneligand that is 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

(3) Quantum Dot-Containing Complex of Ligands2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid and Mono-2-(Acryloyloxy)EthylSuccinate (1:1 Ligand Weight Ratio)

A quantum dot-containing complex was prepared in substantially the samemanner as in (1), except that two ligands including 0.45 g of2,5,8,11,14-pentaoxaheptadecan-17-oic acid and 0.45 g ofmono-2-(acryloyloxy)ethyl succinate were utilized instead of one ligandthat is 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

(4) Quantum Dot-Containing Complex of Ligands2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid and Mono-2-(Acryloyloxy)EthylSuccinate (1:2 Ligand Weight Ratio)

A quantum dot-containing complex was prepared in substantially the samemanner as in (1), except that two ligands including 0.3 g of2,5,8,11,14-pentaoxaheptadecan-17-oic acid and 0.6 g ofmono-2-(acryloyloxy)ethyl succinate were utilized instead of one ligandthat is 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

(5) Quantum Dot-Containing Complex of Ligands2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid and Mono-2-(Acryloyloxy)EthylSuccinate (1:4 Ligand Weight Ratio)

A quantum dot-containing complex was prepared in substantially the samemanner as in (1), except that two ligands including 0.18 g of2,5,8,11,14-pentaoxaheptadecan-17-oic acid and 0.72 g ofmono-2-(acryloyloxy)ethyl succinate were utilized instead of one ligandthat is 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

(6) Quantum Dot-Containing Complex of Ligands2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid and Mono-2-(Acryloyloxy)EthylSuccinate (1:8 Ligand Weight Ratio)

A quantum dot-containing complex was prepared in substantially the samemanner as in (1), except that two ligands including 0.1 g of2,5,8,11,14-pentaoxaheptadecan-17-oic acid and 0.8 g ofmono-2-(acryloyloxy)ethyl succinate were utilized instead of one ligandthat is 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

(7) Quantum Dot-Containing Complex of Ligands2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid and Mono-2-(Acryloyloxy)EthylSuccinate (6:4 Ligand Weight Ratio)

A quantum dot-containing complex was prepared in substantially the samemanner as in (1), except that two ligands including 0.54 g of2,5,8,11,14-pentaoxaheptadecan-17-oic acid and 0.36 g ofmono-2-(acryloyloxy)ethyl succinate were utilized instead of one ligandthat is 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

(8) Quantum Dot-Containing Complex of Ligands2,5,8,11,14-Pentaoxaheptadecan-17-Oic Acid and Mono-2-(Acryloyloxy)EthylSuccinate (1:9 Ligand Weight Ratio)

A quantum dot-containing complex was prepared in substantially the samemanner as in (1), except that two ligands including 0.09 g of2,5,8,11,14-pentaoxaheptadecan-17-oic acid and 0.81 g ofmono-2-(acryloyloxy)ethyl succinate were utilized instead of one ligandthat is 0.9 g of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid.

The aspect ratios and HLBs of the relevant ligands are as follows:

Aspect Ratio Aspect ratio of oleic acid=3.0

-   -   Length=19.7 Å    -   Width=6.57 Å

Aspect ratio of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid=6.8

-   -   Length=23 Å    -   Width=3.4 Å

Aspect ratio of 3-(2-(2-methoxyethoxy)ethoxy)propanoic acid=4.5

-   -   Length=15.4 Å    -   Width=3.4 Å

Aspect ratio of mono-2-(acryloyloxy)ethyl succinate=3.2

-   -   Length=15 Å    -   Width=4.7 Å

HLB

HLB of oleic acid=1.0

-   -   7+2.1[—COOH]—17×0.475[1 CH₃—, 2 ═CH—, 14 —CH₂—]=1.0

HLB of 2,5,8,11,14-pentaoxaheptadecan-17-oic acid=10.4

-   -   7+2.1[—COOH]+5×1.3[3 —O—]—11×0.475[1 CH₃—, 10 —CH₂—]=10.4

HLB of 3-(2-(2-methoxyethoxy)ethoxy)propanoic acid=9.7

-   -   7+2.1[—COOH]+3×1.3[3 —O—]—7×0.475[1 CH₃—, 6 —CH₂—]=9.7

HLB of mono-2-(acryloyloxy)ethyl succinate=11.4

-   -   7+2.1[—COOH]+4×1.3[2 —O—, 2=0]—6×0.475[1 CH₂—, 1 ═CH—, 4        —CH₂—]=11.4

Preparation of Ink Composition Ink Composition (9)

0.5 g of the quantum dot-containing complex of (1) and 0.5 g of amonomer, 1,6-hexanediol diacrylate, were stirred at room temperature for12 hours, and then 0.1 g of a scatterer, TiO₂, and 0.01 g of aninitiator (TPO) were added thereto, followed by stirring for 3 hours,thereby preparing a quantum dot ink composition.

Ink Composition (10)

A quantum dot ink composition was prepared in substantially the samemanner as in (9), except that 0.5 g of the quantum dot-containingcomplex of (2) was utilized.

Ink Composition (11)

A quantum dot ink composition was prepared in substantially the samemanner as in (9), except that 0.5 g of the quantum dot-containingcomplex of (3) was utilized.

Ink Composition (12)

A quantum dot ink composition was prepared in substantially the samemanner as in (9), except that 0.5 g of the quantum dot-containingcomplex of (4) was utilized.

Ink Composition (13)

A quantum dot ink composition was prepared in substantially the samemanner as in (9), except that 0.5 g of the quantum dot-containingcomplex of (5) was utilized.

Ink Composition (14)

A quantum dot ink composition was prepared in substantially the samemanner as in (9), except that 0.5 g of the quantum dot-containingcomplex of (6) was utilized.

Ink Composition (15)

A quantum dot ink composition was prepared in substantially the samemanner as in (9), except that 0.5 g of the quantum dot-containingcomplex of (7) was utilized.

Ink Composition (16)

A quantum dot ink composition was prepared in substantially the samemanner as in (9), except that 0.5 g of the quantum dot-containingcomplex of (8) was utilized.

The HLB value of the monomer, 1,6-hexanediol diacrylate, is 7.1.

Manufacture of Electronic Apparatus Comparative Example 1

A color conversion layer having a thickness of 10 micrometers was formedby inkjet by utilizing the quantum dot ink composition of (9) in a colorconversion area which is the functional region 400 on the encapsulationportion 300 as shown in FIG. 3 , thereby manufacturing an electronicapparatus.

Comparative Example 2

An electronic apparatus was manufactured in substantially the samemanner as in Comparative Example 1, except that a color conversion layerwas formed by inkjet by utilizing the quantum dot ink composition of(10).

Example 1

An electronic apparatus was manufactured in substantially the samemanner as in Comparative Example 1, except that a color conversion layerwas formed by inkjet by utilizing the quantum dot ink composition of(11).

Example 2

An electronic apparatus was manufactured in substantially the samemanner as in Comparative Example 1, except that a color conversion layerwas formed by inkjet by utilizing the quantum dot ink composition of(12).

Example 3

An electronic apparatus was manufactured in substantially the samemanner as in Comparative Example 1, except that a color conversion layerwas formed by inkjet by utilizing the quantum dot ink composition of(13).

Example 4

An electronic apparatus was manufactured in substantially the samemanner as in Comparative Example 1, except that a color conversion layerwas formed by inkjet by utilizing the quantum dot ink composition of(14).

Comparative Example 3

An electronic apparatus was manufactured in substantially the samemanner as in Comparative Example 1, except that a color conversion layerwas formed by inkjet by utilizing the quantum dot ink composition of(15).

Comparative Example 4

An electronic apparatus was manufactured in substantially the samemanner as in Comparative Example 1, except that a color conversion layerwas formed by inkjet by utilizing the quantum dot ink composition of(16).

To evaluate characteristics of electronic apparatuses manufactured inComparative Examples 1 to 4 and Examples 1 to 4, absorption rates andlight conversion efficiency at a current density of 10 mA/cm² weremeasured, and results thereof are shown in Table 1.

The absorption rates and light conversion efficiency were measured byutilizing a measurement device 09920-2-12 manufactured by HamamatsuPhotonics Inc.

TABLE 1 Light Absorption conversion Ligand of quantum dot-containingcomplex rate¹⁾ efficiency²⁾ Comparative2,5,8,11,14-pentaoxaheptadecan-17-oic 78.4% 32.7% Example 1 acidComparative 2,5,8,11,14-pentaoxaheptadecan-17-oic 76.0% 27.0% Example 2acid:3-(2-(2-methoxyethoxy)ethoxy)propanoic acid = 1:1 (weight ratio)Example 1 2,5,8,11,14-pentaoxaheptadecan-17-oic 83.4% 36.8%acid:mono-2-(acryloyloxy)ethyl succinate = 1:1 (weight ratio) Example 22,5,8,11,14-pentaoxaheptadecan-17-oic 81.5% 36.4%acid:mono-2-(acryloyloxy)ethyl succinate = 1:2 (weight ratio) Example 32,5,8,11,14-pentaoxaheptadecan-17-oic 79.4% 36.9%acid:mono-2-(acryloyloxy)ethyl succinate = 1:4 (weight ratio) Example 42,5,8,11,14-pentaoxaheptadecan-17-oic 78.2% 35.6%acid:mono-2-(acryloyloxy)ethyl succinate = 1:8 (weight ratio)Comparative 2,5,8,11,14-pentaoxaheptadecan-17-oic 72.9% 30.0% Example 3acid:mono-2-(acryloyloxy)ethyl succinate = 6:4 (weight ratio)Comparative 2,5,8,11,14-pentaoxaheptadecan-17-oic 74.1% 29.5% Example 4acid:mono-2-(acryloyloxy)ethyl succinate = 1:9 (weight ratio) ¹⁾ratio atwhich a color conversion layer absorbs light of an organiclight-emitting device ²⁾ratio at which absorbed light is converted intolight of a different wavelength

From Table 1, it was confirmed that when compared with ComparativeExamples 1 to 4, Examples 1 to 4 each showed better (excellent orsuitable) absorption rates and light conversion efficiency.

The quantum dot-containing complex according to an embodiment hasexcellent or suitable absorption rate and excellent or suitable lightconversion efficiency.

The use of “may” when describing embodiments of the present disclosurerefers to “one or more embodiments of the present disclosure”.

As used herein, the terms “substantially”, “about”, and similar termsare used as terms of approximation and not as terms of degree, and areintended to account for the inherent deviations in measured orcalculated values that would be recognized by those of ordinary skill inthe art. “About” or “approximately,” as used herein, is inclusive of thestated value and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” may mean within one or morestandard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

Any numerical range recited herein is intended to include all sub-rangesof the same numerical precision subsumed within the recited range. Forexample, a range of “1.0 to 10.0” is intended to include all subrangesbetween (and including) the recited minimum value of 1.0 and the recitedmaximum value of 10.0, that is, having a minimum value equal to orgreater than 1.0 and a maximum value equal to or less than 10.0, suchas, for example, 2.4 to 7.6. Any maximum numerical limitation recitedherein is intended to include all lower numerical limitations subsumedtherein and any minimum numerical limitation recited in thisspecification is intended to include all higher numerical limitationssubsumed therein. Accordingly, Applicant reserves the right to amendthis specification, including the claims, to expressly recite anysub-range subsumed within the ranges expressly recited herein.

The electronic apparatus, the display device, and/or any other relevantdevices or components according to embodiments of the present inventiondescribed herein may be implemented utilizing any suitable hardware,firmware (e.g. an application-specific integrated circuit), software, ora combination of software, firmware, and hardware. For example, thevarious components of the device may be formed on one integrated circuit(IC) chip or on separate IC chips. Further, the various components ofthe device may be implemented on a flexible printed circuit film, a tapecarrier package (TCP), a printed circuit board (PCB), or formed on onesubstrate.

Further, the various components of the device may be a process orthread, running on one or more processors, in one or more computingdevices, executing computer program instructions and interacting withother system components for performing the various functionalitiesdescribed herein. The computer program instructions are stored in amemory which may be implemented in a computing device using a standardmemory device, such as, for example, a random access memory (RAM). Thecomputer program instructions may also be stored in other non-transitorycomputer readable media such as, for example, a CD-ROM, flash drive, orthe like. Also, a person of skill in the art should recognize that thefunctionality of various computing devices may be combined or integratedinto a single computing device, or the functionality of a particularcomputing device may be distributed across one or more other computingdevices without departing from the scope of the embodiments of thepresent disclosure.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the drawings, it will be understood by thoseof ordinary skill in the art that one or more suitable changes in formand details may be made therein without departing from the spirit andscope as defined by the following claims and equivalents thereof.

What is claimed is:
 1. A quantum dot-containing complex comprising: aquantum dot; and a first ligand and a second ligand, each coordinate asurface of the quantum dot, wherein the first ligand is a hydrocarboncompound comprising a hydrophilic moiety and a lipophilic moiety and hasan aspect ratio of 5 or greater, the second ligand is a hydrocarboncompound comprising a hydrophilic moiety and a lipophilic moiety and hasan aspect ratio of 4 or less, and a hydrophile-lipophile balance (HLB)of the first ligand and an HLB of the second ligand are eachindependently 7 or greater, wherein the aspect ratio and HLB arecalculated as following: aspect ratio=ligand length/ligand width Davies'Equation:${HLB} = {7 + {\sum\limits_{i = 1}^{m}H_{i}} - {n \times 0.475}}$wherein in Davies' Equation, m=number of hydrophilic moieties in aligand molecule, H_(i)=coefficient of i^(th) hydrophilic moiety, andn=number of lipophilic moieties in the ligand molecule.
 2. The quantumdot-containing complex of claim 1, wherein the hydrophilic moietycomprises —SO₄ ⁻Na⁺, —COO⁻K⁺, —COO⁻Na⁺, tertiary amine, —COOH, —OH, —O—,═O, or any combination thereof.
 3. The quantum dot-containing complex ofclaim 1, wherein the lipophilic moiety comprises —CH—, —CH₂—, CH₃—,═CH—, ═CH₂, or any combination thereof.
 4. The quantum dot-containingcomplex of claim 1, wherein a COOH moiety is comprised in the firstligand at a terminal end of the first ligand, and a COOH moiety iscomprised in the second ligand at a terminal end of the second ligand.5. The quantum dot-containing complex of claim 1, wherein the firstligand comprises two or more ethylene glycol moieties (OCH₂CH₂O).
 6. Thequantum dot-containing complex of claim 1, wherein the first ligand is2,5,8,11,14-pentaoxaheptadecan-17-oic acid.
 7. The quantumdot-containing complex of claim 1, wherein the second ligand ismono-2-(acryloyloxy)ethyl succinate.
 8. The quantum dot-containingcomplex of claim 1, wherein a weight ratio of the first ligand to thesecond ligand is in a range of 5:4 to 1:8.
 9. The quantum dot-containingcomplex of claim 1, wherein a ratio of a weight of the quantum dot to atotal weight of the first ligand and the second ligand is in a range of10:1 to 10:4.
 10. The quantum dot-containing complex of claim 1, whereinthe quantum dot has a core-shell structure or is a perovskite compound,and the core-shell structure comprises: a core comprising a crystal of afirst semiconductor; and a shell comprising a crystal of a secondsemiconductor.
 11. The quantum-dot containing complex of claim 10,wherein the first semiconductor and the second semiconductor eachindependently comprise a Group 12-Group 16-based compound, a Group13-Group 15-based compound, a Group 14-Group 16-based compound, a Group14-based compound, a Group 11-Group 13-Group 16-based compound, a Group11-Group 12-Group 13-Group 16-based compound, or any combinationthereof.
 12. The quantum-dot containing complex of claim 10, wherein thefirst semiconductor and the second semiconductor each independentlycomprise: CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgS,MgSe CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe,CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTeMgZnS, MgZnSe CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe,HgZnSeS, HgZnSeTe, or HgZnSTe; GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs,AlSb, InN, InP, InAs, InSb GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP,AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs,InPSb, GaAlNP GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs,GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb,or InZnP; SnS, SnSe, SnTe, PbS, PbSe, PbTe SnSeS, SnSeTe, SnSTe, PbSeS,PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe SnPbSSe, SnPbSeTe, or SnPbSTe; Si,Ge, SiC, or SiGe; AgInS, AgInS₂, CuInS, CuInS₂, CuGaO₂, AgGaO₂, orAgAlO₂; or any combination thereof.
 13. The quantum-dot containingcomplex of claim 10, wherein the first semiconductor comprises GaN, GaP,GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs,GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP,InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP GaAlNAs, GaAlNSb, GaAlPAs,GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs,InAlNSb, InAlPAs, InAlPSb, or any combination thereof, and the secondsemiconductor comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS,HgSe, HgTe, MgS, MgSe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe,HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe,HgZnS, HgZnSe, HgZnTe MgZnS, MgZnSe, CdZnSeS, CdZnSeTe, CdZnSTe,CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or anycombination thereof.
 14. An ink composition comprising: the quantumdot-containing complex of claim 1, a monomer, a scatterer, and aninitiator.
 15. The ink composition of claim 14, wherein the monomercomprises a hydrophilic moiety.
 16. The ink composition of claim 14,wherein the monomer is an acrylate-based compound.
 17. The inkcomposition of claim 14, wherein the monomer is 1,6-Hexanedioldiacrylate.
 18. A light-emitting device comprising: a first electrode; asecond electrode facing the first electrode; and an interlayer betweenthe first electrode and the second electrode and comprising an emissionlayer, wherein the emission layer comprises the quantum dot-containingcomplex of claim
 1. 19. An electronic apparatus comprising the quantumdot-containing complex of claim
 1. 20. The electronic apparatus of claim19, further comprising a color filter and a color conversion layer,wherein the color conversion layer comprises the quantum dot-containingcomplex.